Design and Analysis of the X-Waveguide Optical Switch in a MESFET Geometry
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概要
- 論文の詳細を見る
Theoretical analysis of the change in refractive index, in the channel of a GaAs MESFET (metal oxide semiconductor field effect transistor) structure, has been presented for the first time. The analysis shows great potential applications, to use the MESFET geometries, in the design of optical modulators, and switches for monolithic integration. A X-waveguide-type optical switch has been incorporated into the MESFET geometry, and its switching characteristics have been studied by using the beam propagation method. No switching region has been deliberately built into the waveguide. Instead, the gate and drain voltages of the MESFET automatically form and control the switching region. A light wave propagated through a waveguide is reflected by the depletion edge due to the large change of refractive index. An extinction ratio better than 8.75 dB has been obtained at the gate voltage of 7 V.
- 社団法人応用物理学会の論文
- 1992-09-15
著者
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Tada Kunio
Department Of Electronic Engineering Faculty Of Engineering University Of Tokyo
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Gautam D
Central Research Laboratory Hitachi Lid.
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Ishida Koji
Central Research Laboratory Hitachi Lid.
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GAUTAM Dinesh
Central Research Laboratory, Hitachi Lid.
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Tada Kunio
Department Of Electronic Engineering Faculty Of Engineering The University Of Tokyo
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Tada Kunio
Department of Electrical and Computer Engineering, Graduate School of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan
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