Utilization of Non-Pseudomorphic Growth to Realize Tensile Strain on GaAs Substrates
スポンサーリンク
概要
- 論文の詳細を見る
A novel structure consisting of a thick non-pseudomorphic InAlAs grid layer and InGaAs-GaAs strained-layer superlattice dislocation filter is proposed for realizing tensile strain on GaAs substrates. The structure is examined and characterized by photoluminescence, Nomarski etch-pit microscopy and double crystal X-ray diffraction and found to be effective in the incorporation of tensile strain in devices grown on the GaAs substrate.
- 社団法人応用物理学会の論文
- 1993-11-01
著者
-
TADA Kunio
Department of Electronic Engineering, The University of Tokyo
-
Tada Kunio
Department Of Electronic Engineering The University Of Tokyo
-
Tada Kunio
Department Of Electronic Engineering Faculty Of Engineering University Of Tokyo
-
Chan Yuen-chuen
Department Of Electronic Engineering The University Of Tokyo
-
MORIMOTO Tetsurou
Department of Electronic Engineering, The University of Tokyo
-
Morimoto Tetsurou
Department Of Electronic Engineering The University Of Tokyo
-
Tada Kunio
Department Of Electronic Engineering Faculty Of Engineering The University Of Tokyo
関連論文
- InGaAs/InAlAs五層非対称結合量子井戸マッハ・ツェンダー光変調器の特性改善(光部品・電子デバイス実装技術,一般)
- InGaAs/InAlAs五層非対称結合量子井戸マッハ・ツェンダー光変調器の特性改善(光部品・電子デバイス実装技術,一般)
- InGaAs/InAlAs五層非対称結合量子井戸マッハ・ツェンダー光変調器の特性改善(光部品・電子デバイス実装技術,一般)
- InGaAs/InAlAs五層非対称結合量子井戸マッハ・ツェンダー光変調器の特性改善(光部品・電子デバイス実装技術,一般)
- 五層非対称結合量子井戸の作製トレランスに関する理論検討(量子効果デバイス(光信号処理,LD,光増幅,変調等)と集積化技術,一般,材料デバイスサマーミーティング)
- 五層非対称結合量子井戸の作製トレランスに関する理論検討(量子効果デバイス(光信号処理,LD,光増幅,変調等)と集積化技術,一般,材料デバイスサマーミーティング)
- 非対称三重結合量子井戸における電気光学効果(量子光学,非線形光学,超高速現象,レーザ基礎,及び一般)
- C-4-20 InGaAs/InAIAs五層非対称結合量子井戸マッハ・ツェンダー型光変調器(C-4.レーザ・量子エレクトロニクス,一般セッション)
- エレクトロニクス実装学会設立十周年を記念して(社団法人エレクトロニクス実装学会十周年記念)
- C-3-59 GaAs/AlGaAs五層非対称結合量子井戸(FACQW)光位相変調器の評価(光スイッチ・変調器,C-3.光エレクトロニクス,一般講演)
- InGaAs/InAlAs五層非対称結合量子井戸の作製と光変調器への応用(光・電子デバイス実装,デバイス技術,及び一般)
- InGaAs/InAlAs五層非対称結合量子井戸の作製と光変調器への応用(光・電子デバイス実装,デバイス技術,及び一般)
- InGaAs/InAlAs五層非対称結合量子井戸の作製と光変調器への応用(光・電子デバイス実装,デバイス技術,及び一般)
- InGaAs/InAlAs五層非対称結合量子井戸の作製と光変調器への応用(光・電子デバイス実装,デバイス技術,及び一般)
- 「応用物理」創刊75周年を記念して
- Electroabsorptive Properties of InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well (FACQW)
- Strong Bxciton Absorption Peak Enhancement without Redshift of Absorption Edge in Al_Ga_As/GaAs Five-Step Asymmetric Coupled Quantum Well with Modified Potential
- Fabrication and Optical Characterization of Five-Layer Asymmetric Coupled Quantum Well (FACQW)
- 位相変調器用InGaAs/InAlAs五層非対称結合量子井戸の歪導入による特性改善の理論検討(光部品・電子デバイス実装技術,一般)
- 位相変調器用InGaAs/InAlAs五層非対称結合量子井戸の歪導入による特性改善の理論検討(光部品・電子デバイス実装技術,一般)
- 位相変調器用InGaAs/InAlAs五層非対称結合量子井戸の歪導入による特性改善の理論検討(光部品・電子デバイス実装技術,一般)
- Kinetics of GaAs Metalorganic Chemical Vapor Deposition Studied by Numerical Analysis Based on Experimental Reaction Data
- Wide-Angle Coupling to Multi-Mode Interference Devices : A Novel Concept for Compacting Photonic Integrated Circuits
- Quantum-Confined Stark Effect in a Parabolic-Potential Quantum Well
- 位相変調器用InGaAs/InAlAs五層非対称結合量子井戸の歪導入による特性改善の理論検討(光部品・電子デバイス実装技術,一般)
- Analysis of Distributed Feedback Semiconductor Laser-Electroabsorptiorn Modulator Integrated Light Source, Including Gain-Coupled Structure
- Absorptive-Grating Gain-Coupled Distributed-Feedback MQW Lasers with Low Threshold Current and High Single-Longitudinal-Mode Yield
- InGaAs/InP Gain-Coupled Distributed Feedback Laser with a Corrugated Active Layer
- Electrooptic Characterization of Five-Layer Asymmetric Coupled Quantum Well
- Dispersion of Photoelastic Coefficients in ZnSe
- Dispersion of the Linear Electrooptic Coefficient and Its Relation to Resonant Raman Scattering in ZnSe
- A Study on Electroabsorption Effects in Coupled Quantum Wells
- Elastooptic Effect in BaTiO_3
- Electrooptic Coefficient r_ in Proton-Exchanged z-Cut LiTaO_3 Waveguides
- Analysis of X-Intersecting Waveguide Switches with a Large Branching Angles Ranging from 2°to 12°
- Design and Fabrication of Monolithically Integrated Lateral-Electrode Etched-Mirror Laser with Y-Branch Single-Mode Waveguide in GaAs/AlGaAs
- Formation of High-Contrast Periodic Corrugations by Optimizing Optical Parameters of Photoresists in 325 nm Laser Holographie Exposure
- Fabrication of TE/TM Mode Splitter Using Completely Buried GaAs/GaAlAs Waveguide
- Observation of Quantum-Confined Stark Effect in a Graded-Gap Quantum Well
- Wavelength Filtering Operation in Absorptive-Grating Gain-Coupled Distributed-Feedback MQW Lasers
- Elastooptic and Electrooptic Properties of GaAs
- Utilization of Non-Pseudomorphic Growth to Realize Tensile Strain on GaAs Substrates
- Fabrication of LiTaO_3 Optical Waveguide by H^+ Exchange Method
- Decrease in Deposition Rate and Improvement of Step Coverage by CF_4 Addition to Plasma-Enhanced Chemical Vapor Deposition of Silicon Oxide Films
- Preparation of Low-Dielectric-Constant F-Doped SiO2 Films by Plasma-Enhanced Chemical Vapor Deposition
- Preparation of Low Dielectric Constant F-Doped SiO_2 Films by PECVD
- 1.55 μm InGaAs/InAlAs/InP Quantum Wells with Mass-Dependent Width for Polarization-Independent Optical Modulation
- Lattice Constants of the Proton-Exchanged Waveguides Formed on Domain-Inverted LiTaO_3
- Fabrication of Multiple-Electrode Chirped-Grating-Tunable Distributed-Feedback Lasers
- Fabrication and Characteristics of an Integrated DFB Laser/Amplifier Having Reactive-Ion-Etched Tilted End Facets
- Electrooptic Light Beam Deflection with Sr_Ba_Nb_2O_5 Prism
- Linear Electrooptic Properties of ZnTe at 10.6 Microns
- Low-Concentration Cadmium Diffusion into GaAs
- Electrooptic Properties and Raman Scattering in InP
- Design and Analysis of the X-Waveguide Optical Switch in a MESFET Geometry
- Application of Modern Control Theory to Temperature Control of the MBE System
- Measurements of the Linear Electrooptic Coefficients and Analysis of the Nonlinear Susceptibilities in Cubic GaAs and Hexagonal CdS
- A Theory on the Photoelastic Coefficients and Unclamped Values of the Linear Electrooptic Coefficients
- Elastooptic Properties of InP
- Linear Electrooptic Properties of InP
- Generalized Theory of Nonlinear Susceptibilities and Linear Electrooptic Coefficients Based on a Three-Dimensional Anharmonic Oscillator Model
- Simple Kinetic Model of ECR Reactive Ion Beam Etching Reactor for the Optimization of GaAs Etching Process
- Impurity-free Disordering of InGaAs/InGaAlAs Quantum Wells on InP by Dielectric Thin Cap Films and Characterization of Its In-plane Spatial Resolution
- Fabrication and Optical Characterization of Five-Layer Asymmetric Coupled Quantum Well (FACQW)