Simple Kinetic Model of ECR Reactive Ion Beam Etching Reactor for the Optimization of GaAs Etching Process

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概要

• 論文の詳細を見る

• In order to efficiently optimize electron cyclotron resonance/reactive ion beam etching (ECR-RIBE) process for GaAs, we studied the kinetic mechanism of the process. First we examined the relationship between etching performances and process parameters. We paid particular attention to the effect of the Cl2 flow rate. To explain this effect, we examined the effect of Cl2 flow rate on Cl radical concentration by optical emission spectroscopy (OES). The Cl emission intensity depended on Cl2 flow rate and the substrate area. We introduced a simple model of our ECR-RIBE reactor and explained the observed dependence of emission intensity of Cl and Ga. We also explained the flow rate dependence of etching rate in terms of the effect of etching products. We obtained some rate constants of etching reactions according to our model. Our study revealed that the macroscopic phenomena in the reactor, such as the change in gas residence time, should affect the etching performances at a micron level.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1996-02-28

著者

• Sugiyama Masakazu

  Department Of Biotechnology Graduate School Of Agriculture And Life Sciences The University Of Tokyo

• Komiyama Hiroshi

  Department Of Chemical Engineering Faculty Of Engineering University Of Tokyo

• Nakano Yoshiaki

  Department Of Electrical Engineering And Information Systems The University Of Tokyo

• Tada Kunio

  Department Of Electronic Engineering Faculty Of Engineering The University Of Tokyo

• Shimogaki Yukihiro

  Department of Electronic Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113, Japan

• Sugiyama Masakazu

  Department of Chemical System Engineering, Faculty of Engineering, University of Tokyo,

• Yamaizumi Takayuki

  Department of Electronic Engineering, Faculty of Engineering, University of Tokyo,

• Nezuka Masahiro

  Plasma System Corporation, 992 Yaho, Kunitachi-shi, Tokyo 186, Japan

• Shimogaki Yukihiro

  Department of Chemical System Engineering, Faculty of Engineering, University of Tokyo,

• SHIMOGAKI YUKIHIRO

  Department of Chemical Engineering, University of Tokyo

• Tada Kunio

  Department of Electrical and Computer Engineering, Graduate School of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan

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