Stranski–Krastanov Growth of Tungsten during Chemical Vapor Deposition Revealed by Micro-Auger Electron Spectroscopy
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概要
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Chemical vapor deposition (CVD) of tungsten is an important process to make interconnections in advanced integrated-circuit devices. As device dimensions continue to decrease, incomplete nucleation inside the trenches and via holes is becoming a crucial issue. In this work, micro-Auger electron spectroscopy with in-plane spatial resolution was applied for the first time to study the nucleation and growth process of W islands. Results showed that W grew slowly and uniformly on TiN surfaces up to about one-monolayer coverage, and then W islands nucleated and started to grow rapidly. This transition from layer to island shows that W grew by Stranski–Krastanov mode during CVD on TiN from WF6 and SiH4. Drastic difference might exist in chemical reactivity between the initial W layer on TiN surfaces and the W islands, causing the change in W growth rate.
- 2004-10-15
著者
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Noda Suguru
Department Of Chemical System Engineering School Of Engineering The University Of Tokyo
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Yoda Takashi
Advanced Ulsi Process Engineering Department Process & Manufacturing Engineering Center Toshiba
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Komiyama Hiroshi
Department Of Chemical Engineering Faculty Of Engineering University Of Tokyo
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Shimogaki Yukihiro
Department of Electronic Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113, Japan
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Shimogaki Yukihiro
Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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Tsumura Takeshi
Department of Chemical System Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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Fukuhara Jota
Advanced Memory Product Development Department, Memory Division, Toshiba Corporation Semiconductor Company, 800, Yamanoisshiki-cho, Yokkaichi, Mie 512-8550, Japan
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Shimogaki Yukihiro
Department of Chemical System Engineering, Faculty of Engineering, University of Tokyo,
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SHIMOGAKI YUKIHIRO
Department of Chemical Engineering, University of Tokyo
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