Electrochemical Study of Model Additives on Aluminum Single-Crystal Surfaces

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概要

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• An electrochemical study of additives such as phosphoric acid and oxalic acid on Al chemical-mechanical polishing (Al-CMP) is presented. To design a robust Al-CMP slurry, which shows no dependency upon the Al texture, finding suitable additives for the slurry is crucial. Phosphoric acid forms a passivated film on an Al (111) surface, while oxalic acid exhibits a high removal rate on an Al (111) surface. A mixture of these additives can satisfy the requirements for developing a robust Al-CMP process.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2003-04-15

著者

• Yoda Takashi

  Advanced Ulsi Process Engineering Department Process & Manufacturing Engineering Center Toshiba

• Matsui Yoshitaka

  Advanced ULSI Process Engineering Department, Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan

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