Improvement of TiN Flow Modulation Chemical Vapor Deposition from TiCl4 and NH3 by Introducing Ar Purge Time
スポンサーリンク
概要
- 論文の詳細を見る
TiN films were deposited by using TiCl4/NH3 flow modulation chemical vapor deposition (FMCVD). FMCVD consists of repetitive TiN deposition periods by TiCl4/NH3, each of which is followed by Cl reduction period. TiN deposition periods are typically 3 s and Cl reduction periods are 1 s. The effect of the number of deposition/reduction cycles and the effect of the partial pressure of TiCl4 and NH3 on film uniformity and resistivity were investigated. For a total reduction period of 100 s, increasing the number of reduction periods from $100\times 1$-s periods to $300\times 0.33$-s periods decreased the step coverage. This decrease in coverage was due to residual TiCl4 during the Cl reduction period by NH3 that cleared out TiCl4 at a constant rate, independent of the length of the period of reduction cycle. An Ar purge cycle was used between the deposition and reduction cycles to allow the residual TiCl4 to clear out before the NH3 was used for the film reduction cycle. This significantly improved the film step coverage from 50% to over 90%. The minimum film resistivity occurred when the NH3 partial pressure was 0.25 Torr. NH3 partial pressure less than 0.25 Torr inhibited film reduction, and NH3 partial pressure higher than 0.25 Torr enhanced the deposition rate, which also inhibited film reduction. By using the optimum conditions determined in this study, we could obtain TiN films that had film resistivity of about 240 μ$\Omega$$\cdot$cm and step coverage of about 98% at 410°C.
- 2004-04-15
著者
-
Jun Keeyoung
Department Of Materials Engineering School Of Engineering The University Of Tokyo
-
IM Ik-Tae
Dept. of Automotive Engineering, Iksan National College
-
Shimogaki Yukihiro
Department of Materials Engineering, School of Engineering, Univ. of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
-
Shimogaki Yukihiro
Department of Electronic Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113, Japan
-
Jun Keeyoung
Department of Materials Engineering, School of Engineering, Univ. of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
-
Im Ik-Tae
Dept. of Automotive Engineering, Iksan National College, 194-5 Ma-dong, Iksan 570-752, Korea
-
SHIMOGAKI YUKIHIRO
Department of Chemical Engineering, University of Tokyo
関連論文
- Deposition of Cu-Ag Alloy Film by Supercritical Fluid Deposition
- Monolithically Integrated InGaN-Based Multicolor Light-Emitting Diodes Fabricated by Wide-Stripe Selective Area Metal-Organic Vapor Phase Epitaxy
- Intersubband Transition at 1.52μm in GaN/AlN Multiple Quantum Wells Grown by Metal Organic Vapor Phase Epitaxy
- Fabrication of Abrupt AlN/GaN Multi Quantum Wells by Low Temperature Metal Organic Vapor Phase Epitaxy
- Conformal Deposition and Gap-Filling of Copper into Ultranarrow Patterns by Supercritical Fluid Deposition
- Isobutyl silane precursors for SiCH low-k cap layer beyond the 22nm node: analysis of film structure for compatibility of lower k-value and high barrier properties (Special issue: Advanced metallization for ULSI applications)
- Examination of Surface Elementary Reaction Model for Chemical Vapor Deposition of Al Using In Situ Infrared Reflection Absorption Spectroscopy : Teoretical Optimization Procedure (3)
- Elementary Surface Reaction Simulation of Aluminum Chemical Vapor Deposition from Dimethylaluminumhydride Based on Ab Initio Calculations : Theoretical Process Optimization Procedure(2)
- Kinetics of GaAs Metalorganic Chemical Vapor Deposition Studied by Numerical Analysis Based on Experimental Reaction Data
- Reaction Analysis of Aluminum Chemical Vapor Deposition from Dimethyl-aluminum-hydride Using Tubular Reactor and Fourier-Transform Infrared Spectroscopy : Theoretical Process Optimization Procedure(1)
- Effect of Underlayers on the Morphology and Orientation of Aluminum Films Prepared by Chemical Vapor Deposition Using Dimethylaluminumhydride
- Deposition of wsi_x Films from Preactivated Mixture of WF_6/SiH_4
- Electrical and Thermal Stability Characteristics of HfCN Films as Metal Gate-Electrode Synthesized by Metalorganic Chemical Vapor Deposition
- High Temperature Annealing-Induced Phase Transformation Characteristic of Nitrogen-Rich Hafnium Nitride Films
- Physical and Electrical Characteristics of HfN Metal Gate Electrode Synthesized by Post-Rapid Thermal Annealing-assisted MOCVD
- Fabrication of Hf(C)N Films on SiO_2 by Metal Organic Chemical Vapor Deposition (MOCVD) Using TDEAHf Precursor
- Characterization of Indium Segregation in Metalorganic Vapor Phase Epitaxy-Grown InGaP by Schottky Barrier Height Measurement
- Preparation of Amorphous Fluorinated Carbon Film Using Low Global-Warming Potential Gas, C_4F_6, by Plasma Enhanced Chemical Vapor Deposition
- Improvement of TiN Flow Modulation Chemical Vapor Deposition from TiCl_4 and NH_3 by Introducing Ar Purge Time
- Chemical Bonding States and Band Alignment of Ultrathin AlOxNy/Si Gate Stacks Grown by Metalorganic Chemical Vapor Deposition
- Novel Precursors for SiCH Low-$k$ Caps beyond the 22 nm Node: Reactions of Silacyclopentane Precursors in the Plasma-Enhanced Chemical Vapor Deposition Process and Structural Analyses of SiCH Films
- Decrease in Deposition Rate and Improvement of Step Coverage by CF_4 Addition to Plasma-Enhanced Chemical Vapor Deposition of Silicon Oxide Films
- Preparation of Low-Dielectric-Constant F-Doped SiO2 Films by Plasma-Enhanced Chemical Vapor Deposition
- Preparation of Low Dielectric Constant F-Doped SiO_2 Films by PECVD
- High-Temperature Annealing Effect of Si in Group-V Ambient Prior to Heteroepitaxy of InAs in Metal--Organic Vapor Phase Epitaxy
- Metalorganic Vapor Phase Epitaxy of GaAs with AlP Surface Passivation Layer for Improved Metal Oxide Semiconductor Characteristics
- Source Gas Dependency of Amorphous Fluorinated Carbon Film Properties Prepared by Plasma Enhanced Chemical Vapor Deposition Using C4F8, C4F6, and C5F8 Gases
- Preparation of Amorphous Fluorinated Carbon Film Using Low Global-Warming Potential Gas, C4F6, by Plasma Enhanced Chemical Vapor Deposition
- Influence of Crystal Orientation of Ru Under-Layer on Initial Growth of Copper Chemical Vapor Deposition
- Physical and Chemical Contributions of Interfacial Impurities to Film Adhesion : Surfaces, Interfaces, and Films
- Step Coverage Analysis for Hexamethyldisiloxane and Ozone Atmospheric Pressure Chemical Vapor Deposition
- TiN Films Prepared by Flow Modulation Chemical Vapor Deposition using TiCl4 and NH3
- Adhesion Characteristics between Chemical Vapor Deposited Cu and TiN Films : Aspects of Process Integration
- Factors Determining the Generation of Polycrystalline Growth over Masks in Selective-Area Metalorganic Vapor Phase Epitaxy : Gas-Phase Concentration Analysis
- Improvement of TiN Flow Modulation Chemical Vapor Deposition from TiCl4 and NH3 by Introducing Ar Purge Time
- Surface Reaction Kinetics in Metalorganic Vapor Phase Epitaxy of GaAs through Analyses of Growth Rate Profile in Wide-Gap Selective-Area Growth
- Stranski–Krastanov Growth of Tungsten during Chemical Vapor Deposition Revealed by Micro-Auger Electron Spectroscopy
- ACTIVATION MECHANISM OF AMORPHOUS NixZr100-x ALLOYS DURING CO/H2 REACTION AND PREPARATION METHOD OF POROUS AMORPHOUS ALLOY CATALYSTS
- Nucleation of W during Chemical Vapor Deposition from WF6 and SiH4
- Kinetics of Subsurface Formation during Metal–Organic Vapor Phase Epitaxy Growth of InP and InGaP
- Atomic Layer Deposited Co(W) Film as a Single-Layered Barrier/Liner for Next-Generation Cu-Interconnects
- Surface Reaction Kinetics of InP and InAs Metalorganic Vapor Phase Epitaxy Analyzed by Selective Area Growth Technique
- Zn and S Doping in GaAs Selective Area Growth by Metal–Organic Vapor Phase Epitaxy
- Surface Modification of SiO2 Microchannels with Biocompatible Polymer Using Supercritical Carbon Dioxide
- In Situ Observation of Initial Nucleation and Growth of Chemical Vapor Deposition of Copper by Surface Reflectivity Measurement
- Precursor Evaluation for Cu-Supercritical Fluid Deposition Based on Adhesion Properties and Surface Morphology
- The Fabrication of Hafnium Nitride by Metal Organic Chemical Vapor Deposition (MOCVD) Using TDEAHf Precursor for Gate-Electrode Application
- Material Consideration on Ta, Mo, Ru, and Os as Glue Layer for Ultra Large Scale Integration Cu Interconnects
- Kinetic Analysis of Surface Adsorption Layer in GaAs(001) Metalorganic Vapor Phase Epitaxy by In situ Reflectance Anisotropy Spectroscopy
- Comparison of Organic and Hydride Group V Precursors in Terms of Surface Kinetics in Wide-Gap Selective Area Metalorganic Vapor Phase Epitaxy
- Kinetic Analysis of InAsP by Metalorganic Vapor Phase Epitaxy Selective Area Growth Technique
- In situ Observation of Initial Nucleation and Growth Processes in Supercritical Fluid Deposition of Copper
- Low Temperature Metal Organic Vapor Phase Epitaxial Growth of AlN by Pulse Injection Method at 800 °C
- Effect of Partial Pressure of TiCl4 and NH3 on Chemical Vapor Deposition Titanium Nitride (CVD-TiN) Film Cl Content and Electrical Resistivity
- Simple Kinetic Model of ECR Reactive Ion Beam Etching Reactor for the Optimization of GaAs Etching Process
- Effects of Ag Addition on the Resistivity, Texture and Surface Morphology of Cu Metallization
- Impurity-free Disordering of InGaAs/InGaAlAs Quantum Wells on InP by Dielectric Thin Cap Films and Characterization of Its In-plane Spatial Resolution
- Competitive Kinetics Model to Explain Surface Segregation of Indium during InGaP Growth by Using Metal Organic Vapor Phase Epitaxy
- Chemical Vapor Deposition of TiAlN film by Using Titanium Tetrachloride, Dimethylethylamine Alane and Ammonia Gas for ULSI Cu Diffusion Barrier Application
- Fabrication of Hf(C)N Films on SiO2 by Metal Organic Chemical Vapor Deposition (MOCVD) Using TDEAHf Precursor
- Electrical and Thermal Stability Characteristics of HfCN Films as Metal Gate-Electrode Synthesized by Metalorganic Chemical Vapor Deposition
- Intersubband Transition at 1.52 μm in GaN/AlN Multiple Quantum Wells Grown by Metal Organic Vapor Phase Epitaxy
- Factors Determining the Generation of Polycrystalline Growth over Masks in Selective-Area Metalorganic Vapor Phase Epitaxy: Gas-Phase Concentration Analysis
- Kinetics of TiN Chemical Vapor Deposition Process using TiCl4 and NH3 for ULSI Diffusion Barrier Applications: Relationship between Step Coverage and NH3 Partial Pressure