Nucleation of W during Chemical Vapor Deposition from WF6 and SiH4

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概要

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• A gas mixture of tungsten hexafluoride (WF6) and silane (SiH4) is generally used to form the initial layer of tungsten (W) on titanium nitride (TiN). However, the nucleation mechanism is still not clear, thus making it difficult to optimize such processes for complete filling of via holes. Therefore, in this study, we examined the nucleation process by laser-reflection measurements, scanning electron microscopy (SEM), and X-ray photoelectron spectroscopy (XPS). These measurements indicate that W nucleation has two stages: monolayer formation followed by nucleation of three-dimensional (3D) islands. The monolayer formation can be expressed as Langmuir-type adsorption, and proceeds with the reduction of WF6 by Ti on TiN substrates. After monolayer formation, nucleation of 3D islands occurs and islands rapidly grow. These processes were quantitatively modeled using a simple rate equation. The results of our model agree well with our measurements of the deposited amount and coverage of islands.

• 2004-06-15

著者

• Noda Suguru

  Department Of Chemical System Engineering School Of Engineering The University Of Tokyo

• Komiyama Hiroshi

  Department Of Chemical Engineering Faculty Of Engineering University Of Tokyo

• Shimogaki Yukihiro

  Department of Electronic Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113, Japan

• Shimogaki Yukihiro

  Department of Materials Engineering, School of Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

• Kajikawa Yuya

  Department of Chemical System Engineering, School of Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

• Tsumura Takeshi

  Department of Chemical System Engineering, School of Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

• Tsumura Takeshi

  Department of Chemical System Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

• Komiyama Hiroshi

  Department of Chemical System Engineering, School of Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

• Noda Suguru

  Department of Chemical System Engineering, School of Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

• Shimogaki Yukihiro

  Department of Chemical System Engineering, Faculty of Engineering, University of Tokyo,

• SHIMOGAKI YUKIHIRO

  Department of Chemical Engineering, University of Tokyo

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