Kinetic Study on Oxidation of Si(111) Surfaces using H 2O
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概要
- 論文の詳細を見る
Using X-ray photoelectron spectroscopy, we investigated the temperature dependence of the reaction rates at which oxidation of a hydrogen-terminated Si (Si–H) surface proceeds using H2O vapor. The rates of oxidation at temperatures lower than 250°C are not sensitive to the oxidation temperature or the number of impinging H2O molecules. This result indicates that the rate of oxidation of Si–H at lower temperatures are controlled by generation of activated Si–Si back bonds on Si substrates. On the other hand, the rates of oxidation at temperatures higher than 450°C are controlled by the rate at which hydrogen desorbs from the Si–H surface.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1997-04-15
著者
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Egashira Yasuyuki
Department Of Chemical Engineering Graduate School Of Engineering Science Osaka University
-
Takami Seiichi
Department Of Chemical System Engineering Faculty Of Engineering The University Of Tokyo
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Komiyama Hiroshi
Department Of Chemical Engineering Faculty Of Engineering University Of Tokyo
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Takami Seiichi
Department of Chemical System Engineering, Faculty of Engineering, The University of Tokyo,
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Egashira Yasuyuki
Department of Chemical System Engineering, Faculty of Engineering, The University of Tokyo,
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