Ab Initio Calculation of F Atom Desorption in Tungsten Chemical Vapor Deposition Process Using WF6 and H2

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概要

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• Chemical vapor deposition (CVD) of tungsten is widely used in semiconductor devices. In this process, although many atoms are expected to adsorb on a surface during the deposition, the behavior of these atoms has not been understood well. In this study, we have first investigated the reduction step of F adsorbates by H adsorbates on a W surface by density functional theory. The calculated reaction heat (36.5 kcal/mol) is in good agreement with the experimentally estimated value.

• 2003-09-15

著者

• Kubo Momoji

  Department Of Applied Chemistry Graduate School Of Engineering Tohoku University

• Miyamoto Akira

  Department Of Applied Chemistry Graduate School Of Engineering Tohoku University

• Takami Seiichi

  Department Of Chemical System Engineering Faculty Of Engineering The University Of Tokyo

• Kanoh Masaaki

  Corporate Manufacturing Engineering Center Toshiba Corporation

• Sasata Katsumi

  Department Of Applied Chemistry Graduate School Of Engineering Tohoku University

• TAKAGI Shigeyuki

  Corporate Manufacturing Engineering Center Toshiba Corporation

• Nishitani Kazuhito

  Corporate Manufacuturing Engineering Center Toshiba Corporation

• Yokosuka Toshiyuki

  Department Of Materials Chemistry Graduate School Of Engineering Tohoku University

• Miyamoto Akira

  Department of Materials Chemistry, Graduate School of Engineering, Tohoku University, Aoba-yama 07, Sendai 980-8579, Japan

• Kusagaya Tomonori

  Department of Materials Chemistry, Graduate School of Engineering, Tohoku University, Aoba-yama 07, Sendai 980-8579, Japan

• Kubo Momoji

  Department of Materials Chemistry, Graduate School of Engineering, Tohoku University, Aoba-yama 07, Sendai 980-8579, Japan

• Nishitani Kazuhito

  Corporate Manufacturing Engineering Center, Toshiba Corporation, 33, Shin-Isogo-cho, Isogo-ku, Yokohama, Kanagawa 235-0017, Japan

• Takagi Shigeyuki

  Corporate Manufacturing Engineering Center, Toshiba Corporation, 33, Shin-Isogo-cho, Isogo-ku, Yokohama, Kanagawa 235-0017, Japan

• Kanoh Masaaki

  Corporate Manufacturing Engineering Center, Toshiba Corporation, 33, Shin-Isogo-cho, Isogo-ku, Yokohama, Kanagawa 235-0017, Japan

• Nishitani Kazuhito

  Corporate Manufacturing Engineering Center, Toshiba Corporation, 33 Shin-Isogo-cho, Isogo-ku, Yokohama, Kanagawa 235-0017, Japan

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