Tight-Binding Quantum Chemical Molecular Dynamics Study on Depth Profile Prediction in Low Energy Boron Implantation Process

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概要

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• Creation of shallow junction for the future generation LSI is a crucial step in semiconductor industry and low-energy boron implantation process is considered to be a key technology. In this study, we have statistically investigated the effects of orientation of implantation on the dynamic behavior of boron implantation process into hydrogen-terminated Si(001) $2\times 1$ surface by using our original tight-binding quantum chemical molecular dynamics method, which is over 5,000 times faster than conventional first-principle molecular dynamics method. It was found that depth profile of boron implantation can be controlled by orientation of boron implantation and the shallowest implantation depth was obtained in the case of tilt angle equal to 7° among the investigated tilt angles of 0°, 7°, 15°, 22.5°, 30° and 45° at the initial boron energy of 100 eV. At the boron implantation process of over 1 keV energy the tilt angle of 7° has been employed experimentally and the same tilt angle was predicted to be the best even at low-energy region of 100 eV. Furthermore, we investigated the effect of rotation angle on the depth profile and at all the investigated tilt angles the average implantation depth becomes shallower for rotation angle of 45° that is along $\langle 011\rangle$ direction, than for rotation angle of 0° that is along $\langle 001\rangle$. Hence, the shallowest depth profile was obtained in the case of tilt angle of 7° and rotation angle of 45°, where the distribution of intruded boron atom was more concentrated than for the same tilt angle but rotation angle of 0°. The effect of tilt and rotation angles on the boron implantation process has not been clarified experimentally at low-energy boron implantation process of less than 1 keV and hence we concluded that theoretical optimization of low-energy boron implantation process has been succeeded by means of our original tight-binding quantum chemical molecular dynamics method.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-04-15

著者

• Kubo Momoji

  Department Of Applied Chemistry Graduate School Of Engineering Tohoku University

• TSUBOI Hideyuki

  New Industry Creation Hatchery Center, Tohoku University

• Sasata Katsumi

  Department Of Applied Chemistry Graduate School Of Engineering Tohoku University

• Broclawik Ewa

  New Industry Creation Hatchery Center Tohoku University

• Koyama Michihisa

  Department Of Applied Chemistry Graduate School Of Engineering Tohoku University

• Masuda Tsuyoshi

  Department Of Applied Chemistry Tohoku University

• Yabuhara Hidehiko

  Corporate Manufacturing Engineering Center Toshiba Corporation

• Iga Hideki

  Department Of Applied Chemistry Graduate School Of Engineering Tohoku University

• Sagawa Ai

  Department Of Applied Chemistry Graduate School Of Engineering Tohoku University

• Miyamoto Akira

  New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan

• Miyamoto Akira

  New Industry Creation Hatchery Center (NICHe), Tohoku University, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan

• Sasata Katsumi

  Department of Applied Chemistry, Graduate School of Engineering, Tohoku University, 6-6-07 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan

• Broclawik Ewa

  New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan

• Iga Hideki

  Department of Applied Chemistry, Graduate School of Engineering, Tohoku University, 6-6-07 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan

• Masuda Tsuyoshi

  Department of Applied Chemistry, Graduate School of Engineering, Tohoku University, 6-6-07 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan

• Kubo Momoji

  Department of Applied Chemistry, Graduate School of Engineering, Tohoku University, 6-6-07 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan

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