Theoretical Simulation of Dielectric Breakdown by Molecular Dynamics and Tight-Binding Quantum Chemistry Methods
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概要
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A novel methodology is addressed and employed to simulate dielectric breakdown process of the amorphous SiO2 ($a$-SiO2) under high electric fields, as well as the role of hydrogen and oxygen vacancy in the breakdown process. This methodology is based on classical molecular dynamics in conjunction with our original tight-binding quantum chemical molecular dynamics method. It is shown from the electronic structure that gap of highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) for $a$-SiO2 under no electric field at 300 K is calculated to be 7.5 eV and the orbital contributions to the valence band and conduction band are in line with experimental data. We have evaluated the electric field dependence of breakdown for $a$-SiO2 at 300 K and found that the insulator property shifts to conductor when electric field reached to a very high value of $5\times 10^{10}$ V/m. The result of this process can be ascribed to the decreasing of band gap induced by the destruction of geometry of $a$-SiO2 under very high electric field. Our results reveal that the conductivity of $a$-SiO2 increases with the increase of hydrogen or oxygen vacancy concentration in the oxide structure under the electric field. This supports the fact that defects play an important role in triggering breakdown process. Finally, a complex model has been build and used to simulate the influence of interface structure of Si and SiO2 under high electric field.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-04-30
著者
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Del Carpio
Department Of Applied Chemistry Graduate School Of Engineering Tohoku University
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Kubo Momoji
Department Of Applied Chemistry Graduate School Of Engineering Tohoku University
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Takaba Hiromitsu
Department Of Applied Chemistry Graduate School Of Engineering Tohoku University
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Selvam Parasuraman
New Industry Creation Hatchery Center Tohoku University
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Tsuboi Hideyuki
Department Of Applied Chemistry Graduate School Of Engineering Tohoku University
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Miyamoto Akira
Department Of Applied Chemistry Graduate School Of Engineering Tohoku University
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Endou Akira
Department Of Applied Chemistry Graduate School Of Engineering Tohoku University
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Koyama Michihisa
Department Of Applied Chemistry Graduate School Of Engineering Tohoku University
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Chutia Arunabhiram
Department Of Applied Chemistry Graduate School Of Engineering Tohoku University
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Zhu Zhigang
Department Of Applied Chemistry Graduate School Of Engineering Tohoku University
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Kubo Momoji
Department of Applied Chemistry, Graduate School of Engineering, Tohoku University, 6-6-11-1302 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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