Novel Method Based on Quantum Chemistry for Calculation of Ion Induced Secondary Electron Emission Coefficient of MgO Surfaces
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概要
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High ion induced secondary electron emission (IISEE) coefficient ($\gamma$) MgO protecting layers are required in order to decrease the firing voltage of plasma display panels (PDPs). Theoretical calculation of $\gamma$ for MgO surfaces provides an effective way to design better protecting layers. Here, we have developed a novel $\gamma$ value estimation method based on an ultra accelerated quantum chemical molecular dynamics simulation considering the collision effect of Ne+ into a flat MgO(100) surface. Compared with experimentally obtained results, our estimated $\gamma$ values are only marginally different. Our study shows that $\gamma$ is primarily influenced by impact sites and Ne+ acceleration voltage. To interpret the behavior of $\gamma$ in terms of these two variables, we analyzed the electronic structure of the MgO surface during the collision of Ne+. Our analyses show that the work function depends on impact sites and Ne+ acceleration voltage since Ne+ interacts with the surface. Our newly developed methodology enabled $\gamma$ estimation from quantum chemical instances alone, considering the effect of Ne+ collision onto the MgO surface.
- 2009-04-25
著者
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Sahnoun Riadh
Department Of Applied Chemistry Graduate School Of Engineering Tohoku University
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Del Carpio
Department Of Applied Chemistry Graduate School Of Engineering Tohoku University
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Kubo Momoji
Fracture and Reliability Research Institute, Graduate School of Engineering, Tohoku University
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Suzuki Ai
New Ind. Creation Hatchery Center Tohoku Univ.
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Takaba Hiromitsu
Department Of Applied Chemistry Graduate School Of Engineering Tohoku University
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Tsuboi Hideyuki
Department Of Applied Chemistry Graduate School Of Engineering Tohoku University
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Kikuchi Hiromi
Department Of Applied Chemistry Graduate School Of Engineering Tohoku University
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Miyamoto Akira
Department Of Applied Chemistry Graduate School Of Engineering Tohoku University
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Endou Akira
Department Of Applied Chemistry Graduate School Of Engineering Tohoku University
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Onuma Hiroaki
Department Of Applied Chemistry Graduate School Of Engineering Tohoku University
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Koyama Michihisa
Department Of Applied Chemistry Graduate School Of Engineering Tohoku University
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Hatakeyama Nozomu
Department Of Applied Chemistry Graduate School Of Engineering Tohoku University
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Yamashita Itaru
Department Of Psychiatry And Neurology Hokkaido University School Of Medicine
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Kajiyama Hiroshi
Department Of Semiconductor Electronics And Integration Science Graduate School Of Advanced Sciences
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Serizawa Kazumi
Department of Applied Chemistry, Graduate School of Engineering, Tohoku University, 6-6-11-1302 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Kitagaki Masaki
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashihiroshima, Hiroshima 739-8530, Japan
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Yamashita Itaru
Department of Chemical Engineering, Graduate School of Engineering, Tohoku University, 6-6-11-1302 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Yamashita Itaru
Department of Applied Chemistry, Graduate School of Engineering, Tohoku University, 6-6-11-1302 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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