Kanoh Masaaki | Corporate Manufacturing Engineering Center Toshiba Corporation

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著作論文

Dry Etching Characteristics of Si-based Materials Using CF_4/O_2 Atmospheric-Pressure Glow Discharge Plasma
Measurement of Electron Density of Reactive Plasma Using a Plasma Oscillation Method(Nuclear Science, Plasmas, and Electric Discharges)
Inductively Coupled Plasma Source with Internal Straight Antenna : Nuclear Science, Plasmas, and Electric Discharges
End-point Detection of Reactive Ion Etching by Plasma Impedance Monitoring
Microwave-Excited Large-Area Plasma Source Using a Slot Antenna
Ab Initio Calculation of F Atom Desorption in Tungsten Chemical Vapor Deposition Process Using WF6 and H2
Quantum Chemical Molecular Dynamics Simulation of the Plasma Etching Processes
A Theoretical Study on the Realistic Low Concentration Doping in Silicon Semiconductors by Accelerated Quantum Chemical Molecular Dynamics Method
End-point Detection of Reactive Ion Etching by Plasma Impedance Monitoring

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