Measurement of Electron Density of Reactive Plasma Using a Plasma Oscillation Method(Nuclear Science, Plasmas, and Electric Discharges)
スポンサーリンク
概要
- 論文の詳細を見る
We measured the electron density of reactive plasma using a plasma oscillation probe and analyzed the mode change of power coupling during etching. The unique behavior of plasmas containing reactive negative ions is clarified. The change in the plasma reactor mode during silicon dioxide etching, from the inductive mode to the capacitive mode with increasing pressure, is investigated.
- 社団法人応用物理学会の論文
- 2002-06-15
著者
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KANOH Masaaki
Corporate Manufacturing Engineering Center, Toshiba Corporation
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YAMAGE Masashi
Corporate Manufacturing Engineering Center, Toshiba Corporation
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Kanoh Masaaki
Corporate Manufacturing Engineering Center Toshiba Corporation
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Yamage Masashi
Corporate Manufacturing Engineering Center Toshiba Corporation
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TONOTANI Junichi
Corporate Manufacturing Engineering Center, Toshiba Corporation
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Tonotani J
Corporate Manufacturing Engineering Center Toshiba Corporation
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Tonotani Junichi
Corporate Manufacturing Engineering Center Toshiba Corporation
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AOKI Katsuaki
Corporate Manufacturing Engineering Center, Toshiba Corporation
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Aoki Katsuaki
Corporate Manufacturing Engineering Center Toshiba Corporation
関連論文
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- Formation of Ammonium Salts and Their Effects on Controlling Pattern Geometry in the Reactive Ion Etching Process for Fabricating Aluminum Wiring and Polysilicon Gate
- Oxygen Plasma Damage in GaAs Directly Exposed to Surface-Wave Plasma
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- Quantum Chemical Molecular Dynamics Simulation of the Plasma Etching Processes
- A Theoretical Study on the Realistic Low Concentration Doping in Silicon Semiconductors by Accelerated Quantum Chemical Molecular Dynamics Method
- New Inductively Coupled Plasma System Using Divided Antenna for Photoresist Ashing
- End-point Detection of Reactive Ion Etching by Plasma Impedance Monitoring