End-point Detection of Reactive Ion Etching by Plasma Impedance Monitoring

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概要

• 論文の詳細を見る
• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 2001-03-01

著者

• Kanoh Masaaki

  Corporate Manufacturing Engineering Center Toshiba Corporation

• Yamage Masashi

  Corporate Manufacturing Engineering Center Toshiba Corporation

• TAKADA Hiroyuki

  Corporate Manufacturing Engineering Center, Toshiba Corporation

関連論文

• Dry Etching Characteristics of Si-based Materials Using CF_4/O_2 Atmospheric-Pressure Glow Discharge Plasma
• Formation of Ammonium Salts and Their Effects on Controlling Pattern Geometry in the Reactive Ion Etching Process for Fabricating Aluminum Wiring and Polysilicon Gate
• Measurement of Electron Density of Reactive Plasma Using a Plasma Oscillation Method(Nuclear Science, Plasmas, and Electric Discharges)
• Inductively Coupled Plasma Source with Internal Straight Antenna : Nuclear Science, Plasmas, and Electric Discharges
• End-point Detection of Reactive Ion Etching by Plasma Impedance Monitoring
• Microwave-Excited Large-Area Plasma Source Using a Slot Antenna
• Ab Initio Calculation of F Atom Desorption in Tungsten Chemical Vapor Deposition Process Using WF6 and H2
• Quantum Chemical Molecular Dynamics Simulation of the Plasma Etching Processes
• A Theoretical Study on the Realistic Low Concentration Doping in Silicon Semiconductors by Accelerated Quantum Chemical Molecular Dynamics Method
• New Inductively Coupled Plasma System Using Divided Antenna for Photoresist Ashing
• End-point Detection of Reactive Ion Etching by Plasma Impedance Monitoring

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