Microwave-Excited Large-Area Plasma Source Using a Slot Antenna
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概要
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We developed a stable and uniform large-area plasma source using surface waves generated from a slot antenna. The propagation of microwaves radiating from the slot antenna was studied and the optimal shape of the slot antenna for uniform plasma generation was determined. The characteristics of a dry etching process using the plasma were also evaluated. It was confirmed that some of the microwaves which radiated from the slot antenna propagate as surface waves in the dielectric window. By adjusting the angle of the slot antenna, the plasma was generated in the direction perpendicular to the axis of the slot antenna. An Ar plasma electron density of the order of 10^<11>/cm^3, which exceeds the electron density for blocking the propagation of microwaves (cutoff frequency), was obtained. On the basis of these observations, it was considered that the microwaves radiating from the slot antenna propagate in the form of surface waves in the direction perpendicalar to the axis of the slot antenna, and generate surface-wave plasma. The results of the measurements of the etching rate and ashing rate yielded a poly-Si etching rate 470nm/min or greater with a uniformity of 5% or better, and an ashing rate of 3000nm/min or greater with a uniformity of 7% or better. The poly-Si etching rate was approximately twofold and the ashing rate was approximately fivefold the corresponding values obtained by the conventional chemical dry etching method.
- 社団法人応用物理学会の論文
- 2000-09-15
著者
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Yamauchi Takeshi
Corporate Manufacturing Engineering Center Toshiba Corporation
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KATAOKA Yoshinori
Corporate manufacturing Engineering Center, Toshiba Corporation
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Kanoh Masaaki
Corporate Manufacturing Engineering Center Toshiba Corporation
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Aoki Katsuaki
Corporate Manufacturing Engineering Center Toshiba Corporation
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Kataoka Yoshinori
Corporate Manufacturing Engineering Center Toshiba Corporation
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