Surface Protrusions of Chemical Vapor Deposited TiN Films Caused by Cu Contamination of Silicon Substrates

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1998-05-15

著者

• TAKAMI Seiichi

  Department of Materials Chemistry, Graduate School of Engineering, Tohoku University

• Takami Seiichi

  Department Of Chemical System Engineering The University Of Tokyo:(present Address)department Of Che

• Takami Seiichi

  Department Of Chemical System Engineering Faculty Of Engineering The University Of Tokyo

• CHENG Degang

  Department of Chemical System Engineering, The University of Tokyo

• OGAWA Yoshifumi

  Department of Chemical System Engineering, The University of Tokyo

• HAMAMURA Hirotaka

  Department of Chemical System Engineering, The University of Tokyo

• SHIRAKAWA Hiroaki

  Department of Chemical System Engineering, The University of Tokyo

• OSAWA Toshio

  Department of Chemical System Engineering, The University of Tokyo

• KOMIYAMA Hiroshi

  Department of Chemical System Engineering, The University of Tokyo

• Ogawa Yoshifumi

  Department Of Chemical System Engineering The University Of Tokyo

• Cheng D

  Semiconductor Process Lab. Tokyo Jpn

• Cheng Degang

  Department Of Chemical System Engineering University Of Tokyo

• Osawa T

  Department Of Chemical System Engineering The University Of Tokyo

• Osawa Toshio

  Department Of Chemical Engineering The University Of Tokyo

• Komiyama Hiroshi

  Department Of Chemical System Engineering The University Of Tokyo

• Komiyama Hiroshi

  Department Of Chemical Engineering Faculty Of Engineering University Of Tokyo

• Hamamura H

  Univ. Tokyo Tokyo Jpn

• Hamamura Hirotaka

  Department Of Chemical System Engineering School Of Engineering University Of Tokyo

• Shirakawa Hiroaki

  Department Of Chemical System Engineering The University Of Tokyo

• OGAWA Yoshifumi

  Deparment of Mathematical Sciences, Tokyo Denki University

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