Adhesion Characteristics between Chemical Vapor Deposited Cu and TiN Films : Aspects of Process Integration
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概要
- 論文の詳細を見る
This paper examines the properties of Cu films deposited on different TiN substrates. The TiN substrates were prepared using TiCl_4/NH_3 chemistry based chemical vapor deposited (CVD) TiN process by varying the preparation methods and temperatures. Properties examined include morphology and crystallinity as well as adhesion characteristics of the Cu films on the TiN substrates. It was found that the Cu film properties were strongly affected by the overall stress in the multi-layer structure and the amount of residual chlorine (Cl) in the TiN film. When the stress conditions of the Cu and TiN films are the same, good adhesion occurred. Higher Cl concentrations caused adhesion enhancement of the Cu film; however, surface morphology was degraded. Angle resolved X-ray photoelectron spectroscopy (XPS) results and depth analysis implied that fast Cu diffusion occurred in the near-interface region. It is suggested that Cl enhances the diffusion of Cu, resulting in the formation of a diffusion interface that improves adhesion. [DOI: 10.1143/JJAP.41.1500]
- 社団法人応用物理学会の論文
- 2002-03-15
著者
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Kim Young
Department Of Agricultural Chemistry The University Of Tokyo
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Kim Y
Department Of Materials Engineering Faculty Of Engineering University Of Tokyo
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Shimogaki Yukihiro
Department Of Materials Engineering Faculty Of Engineering Univerity Of Tokyo
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Shimogaki Yukihiro
Department Of Materials Engineering Faculty Of Engineering University Of Tokyo
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Hamamura Hirotaka
Department Of Materials Engineering Faculty Of Engineering University Of Tokyo
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Hamamura Hirotaka
Department Of Chemical System Engineering School Of Engineering University Of Tokyo
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Shimogaki Yukihiro
Department of Electronic Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113, Japan
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Shimogaki Yukihiro
Department of Chemical System Engineering, Faculty of Engineering, University of Tokyo,
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SHIMOGAKI YUKIHIRO
Department of Chemical Engineering, University of Tokyo
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