Rapid Growth of AlN Films by Particle-Precipitation Aided Chemical Vapor Deposition
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概要
- 論文の詳細を見る
A colorless and transparent AlN film 0.3 mm in thickness was grown on a quartz glass substrate by the reaction between AlCl_3 and NH_3 at 1073 K and atmospheric pressure. The growth rate of this film was as large as 80 nm/s. The formation of fine particles in the gas followed by their precipitation onto the substrate kept colder than the gas, due to thermophoretic and diffusional movements, was presumably responsible for this rapid growth.
- 社団法人応用物理学会の論文
- 1985-10-20
著者
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Osawa Toshio
Department Of Chemical Engineering The University Of Tokyo
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Komiyama Hiroshi
Department Of Chemical Engineering The University Of Tokyo
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Komiyama Hiroshi
Department Of Chemical Engineering Faculty Of Engineering University Of Tokyo
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