Chemical Vapor Deposition of TiAlN film by Using Titanium Tetrachloride, Dimethylethylamine Alane and Ammonia Gas for ULSI Cu Diffusion Barrier Application

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概要

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• We report on the deposition of Ti1-xAlxN films by chemical vapor deposition (CVD) system. Titanium tetrachloride (TiCl4), dimethylethylamine alane (DMEAA) and ammonia gas were used as sources. Chemical composition, microstructure and electrical resistivity were investigated at various deposition conditions by X-ray photoelectron spectroscopy, X-ray diffraction, scanning electron microscopy and 4 point probe. Al content, $x$, in Ti1-xAlxN film was varied from 0.04 to 0.79 in our experimental conditions. As deposition temperature increased in the temperature range from 220°C to 410°C, Al content decreased. Also, Al content in Ti1-xAlxN films shows a linear relationship with the partial pressure of DMEAA. Up to $x=0.15$, glancing angle XRD peaks showed only B1 (NaCl) cubic structures but further increasing of Al content leads to amorphous structure. For Ti0.76Al0.24N film, Cu(50 nm)/Ti0.76Al0.24N(20 nm)/Si substrate stack was prepared to examine the barrier property against Cu diffusion. Cu diffused into Si substrate through the Ti0.76Al0.24N(20 nm) film from 700°C, 30 min vacuum annealing. This result is higher than that of CVD-TiN(50 nm) barrier which failed at 400°C.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-12-15

著者

• Shimogaki Yukihiro

  Department of Electronic Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113, Japan

• Shin Young-Hoon

  Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

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