High-Temperature Annealing Effect of Si in Group-V Ambient Prior to Heteroepitaxy of InAs in Metal--Organic Vapor Phase Epitaxy

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概要

• 論文の詳細を見る

• We investigated the state of the Si(111) surface and its effect on InAs growth after annealing at high temperature with and without an As or P source flow in H2 ambient in metal--organic vapor phase epitaxy (MOVPE). In multi-step growth of InGaAs by micro-channel selective-area growth, perfect coverage of Si growth areas by InAs, which is grown first, by controlling the state of the Si surface is critical for the following InGaAs lateral growth. Although both As and P sources protect the surface against contamination from inside the reactor, annealing with the P source at high temperature is optimal in terms of InAs nucleation and coverage of growth areas by InAs. The amount of O contamination after P annealing at high temperature was significantly lower than that under other annealing conditions. Therefore, O is the most critical contamination in InAs nucleation.

• 2011-04-25

著者

• Deura Momoko

  Department Of Electrical Engineering And Information Systems School Of Engineering The University Of

• Takenaka Mitsuru

  Department Of Electrical Engineering And Information Systems School Of Engineering The University Of

• Sugiyama Masakazu

  Department Of Biotechnology Graduate School Of Agriculture And Life Sciences The University Of Tokyo

• Kondo Yoshiyuki

  Department Of Applied Chemistry And Bioengineering Graduate School Of Engineering Osaka City Univers

• Takagi Shinichi

  Department Of Electrical Engineering And Information Systems The University Of Tokyo

• Nakano Yoshiaki

  Department Of Electrical Engineering And Information Systems The University Of Tokyo

• Shimogaki Yukihiro

  Department of Electronic Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113, Japan

• Takagi Shinichi

  Department of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan

• Deura Momoko

  Department of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan

• Kondo Yoshiyuki

  Department of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan

• Shimogaki Yukihiro

  Department of Materials Engineering, School of Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan

• Shimogaki Yukihiro

  Department of Chemical System Engineering, Faculty of Engineering, University of Tokyo,

• Deura Momoko

  Department of Applied Physics, Faculty of Science, Tokyo University of Science, Katsushika, Tokyo 125-8585, Japan

• SHIMOGAKI YUKIHIRO

  Department of Chemical Engineering, University of Tokyo

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