High Performance Ultrathin (110)-Oriented Ge-on-Insulator p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated by Ge Condensation Technique
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2010-04-25
著者
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Dissanayake Sanjeewa
Department Of Electrical Engineering And Information Systems The University Of Tokyo
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Sugahara Satoshi
Tokyo Institute Of Technology
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TAKENAKA Mitsuru
Department of Electrical Engineering and Information Systems, The University of Tokyo
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TAKAGI Shinichi
Department of Electrical Engineering and Information Systems, The University of Tokyo
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TOMIYAMA Kentaro
Department of Electrical Engineering and Information Systems, The University of Tokyo
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Takenaka Mitsuru
Department Of Electrical Engineering And Information Systems School Of Engineering The University Of
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Takenaka Mitsuru
Department Of Electrical Engineering And Information Systems The University Of Tokyo
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Tomiyama Kentaro
Department Of Electrical Engineering And Information Systems The University Of Tokyo
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Takagi Shinichi
Department Of Electrical Engineering And Information Systems The University Of Tokyo
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