Reduction in Interface Trap Density of Al

スポンサーリンク

概要

• 論文の詳細を見る

• An electron cyclotron resonance (ECR) plasma post-nitridation method has been investigated for improving Al<inf>2</inf>O<inf>3</inf>/SiGe metal--oxide--semiconductor (MOS) interfaces. We evaluated the interface trap density (D_{\text{it}}) of Al/Al<inf>2</inf>O<inf>3</inf>/Si<inf>0.75</inf>Ge<inf>0.25</inf>/p-Si MOS capacitors by the conductance method, showing that D_{\text{it}} of the Al<inf>2</inf>O<inf>3</inf>/SiGe interfaces was reduced to 3\times 10^{11} cm^-2eV^-1at the minimum expense of equivalent oxide thickness (EOT). X-ray photoelectron spectroscopy (XPS) revealed that a SiGe--ON interfacial layer was formed between the Al<inf>2</inf>O<inf>3</inf>and SiGe layers, which improved the interfacial properties through nitrogen passivation of SiGe interfaces. As a result, a superior Al<inf>2</inf>O<inf>3</inf>/SiGe MOS interface with a 0.2 nm EOT increase can be obtained by plasma post-nitridation.

• 2013-05-25

著者

• Hata Masahiko

  Sumitomo Chemical

• Takenaka Mitsuru

  Department Of Electrical Engineering And Information Systems School Of Engineering The University Of

• Takagi Shinichi

  Department Of Electrical Engineering And Information Systems The University Of Tokyo

• Zhang Rui

  Department Of Biochemistry And Molecular Biology Fourth Military Medical University

• Zhang Rui

  Department of Electrical Engineering and Information Systems, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan

• Han Jaehoon

  Department of Electrical Engineering and Information Systems, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan

• Osada Takenori

  Sumitomo Chemical Co., Ltd., Chuo, Tokyo 104-0033, Japan

• Hata Masahiko

  Sumitomo Chemical Co., Ltd., Chuo, Tokyo 104-0033, Japan

関連論文

• Partial vs Full Coverage for Tandem Lesions in Culprit Vessel During Primary Coronary Intervention in Patients With Acute ST-Elevation Myocardial Infarction : The PERFECT-AMI Study
• Pharmacokinetics of Indomethacin, a Metabolite of Acemetacin, Following a Single dose and Multiple doses Administered as Acemetacin Sustained-Release Tablets in Healthy Male Volunteers
• Possible role for a polysaccharide antigen shared between Streptococcus pyogenes and S. mutans in the pathogenesis of poststreptococcal glomerulonephritis
• Caffeic Acid Protects Hydrogen Peroxide Induced Cell Damage in WI-38 Human Lung Fibroblast Cells(Molecular and Cell Biology)
• Protective Effect of Triphlorethol-A from Ecklonia cava against Ionizing Radiation in vitro
• Developmental Characteristics of Mice Lacking the DNA Excision Repair Gene XPG
• Neuronal Migration and Neuronal Migration Disorder in Cerebral Cortex
• Increased Serum Glycated Albumin Level is Associated With the Presence and Severity of Coronary Artery Disease in Type 2 Diabetic Patients
• Family and segregation studies : 411 Chinese children with primary nocturnal enuresis
• Thin Body III-V-Semiconductor-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Fabricated Using Direct Wafer Bonding
• InGaAsP Photonic Wire Based Ultrasmall Arrayed Waveguide Grating Multiplexer on Si Wafer
• High Electron Mobility Metal-Insulator-Semiconductor Field-Effect Transistors Fabricated on (111)-Oriented InGaAs Channels
• Dislocation-Free InGaAs on Si(111) Using Micro-Channel Selective-Area Metalorganic Vapor Phase Epitaxy
• Gene Polymorphisms of the Renin-Angiotensin-Aldosterone System and Angiotensin II Type 1-Receptor Activating Antibodies in Renal Rejection
• Differential Control of Systolic and Diastolic Blood Pressure : Factors Associated With Lack of Blood Pressure Control in Rural Community of Liaoning Province, China
• Influence of 5/3 Ratio of Carbon-Doped p-GaAs on Current Gain and Its Thermal Stability in InGaP/GaAs HeterdunctionBipolmTransistors
• Demonstration of All-Optical Wavelength Converter Based on Fabry-Perot Semiconductor Optical Amplifier
• A genetic mouse model carrying the nonfunctional xeroderma pigmentosum group G gene
• High Performance Ultrathin (110)-Oriented Ge-on-Insulator p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated by Ge Condensation Technique
• Physical Origin of Drive Current Enhancement in Ultrathin Ge-on-Insulator n-Channel Metal--Oxide--Semiconductor Field-Effect Transistors under Full Ballistic Transport
• Interface-Controlled Self-Align Source/Drain Ge p-Channel Metal--Oxide--Semiconductor Field-Effect Transistors Fabricated Using Thermally Oxidized GeO2 Interfacial Layers
• High-Temperature Annealing Effect of Si in Group-V Ambient Prior to Heteroepitaxy of InAs in Metal--Organic Vapor Phase Epitaxy
• Gas Phase Doping of Arsenic into (100), (110), and (111) Germanium Substrates Using a Metal--Organic Source
• New Electrodeless Light Source Intensified by Electron Cyclotron Resonance Heating
• Influences of Supplementary Dietary Tungsten on Methionine Metabolism in Rabbits Fed a Low-Cholesterol plus Methionine Diet
• GaInAsP/InP Directional Coupler Loaded with Grating for Optically-Controlled Switching(Special Issue on Recent Progress of Integrated Photonic Devices)
• Dependences of Initial Nucleation on Growth Conditions of InAs on Si by Micro-Channel Selective-Area Metal–Organic Vapor Phase Epitaxy
• Tolerance of two invasive thistles to repeated disturbance
• Ultrathin Body InGaAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors with InP Passivation Layers on Si Substrates Fabricated by Direct Wafer Bonding
• A Uremic Solute, P-Cresol, Inhibits the Proliferation of Endothelial Progenitor Cells via the p38 Pathway
• ？？/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer Bonding
• Investigation of InAlAs Oxide/InP Metal–Oxide–Semiconductor Structures Formed by Wet Thermal Oxidation
• Electron Mobility Enhancement of Extremely Thin Body In_Ga_As-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Substrates by Metal-Oxide-Semiconductor Interface Buffer Layers
• Self-Aligned Metal Source/Drain InxGa1-xAs n-Metal--Oxide--Semiconductor Field-Effect Transistors Using Ni--InGaAs Alloy
• Side population cells isolated from human osteosarcoma are enriched with tumor-initiating cells
• III-V/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer Bonding
• Controlling Anion Composition at Metal--Insulator--Semiconductor Interfaces on III--V Channels by Plasma Processing
• Characterization of Ni--GaSb Alloys Formed by Direct Reaction of Ni with GaSb
• Characterization of Ni-GaSb Alloys Formed by Direct Reaction of Ni with GaSb
• Protein-energy wasting and peritoneal function in elderly peritoneal dialysis patients
• Warming leads to divergent responses but similarly improved performance of two invasive thistles
• Influence of V/III Ratio of Carbon-Doped p-GaAs on Current Gain and Its Thermal Stability in InGaP/GaAs Heterojunction Bipolar Transistors
• Impacts of Surface Roughness Reduction in (110) Si Substrates Fabricated by High-Temperature Annealing on Electron Mobility in n-Channel Metal--Oxide--Semiconductor Field-Effect Transistors on (110) Si
• Reduction in Interface Trap Density of Al
• InGaAsP Grating Couplers Fabricated Using Complementary-Metal--Oxide--Semiconductor-Compatible III--V-on-Insulator on Si
• Impacts of Surface Roughness Reduction in (110) Si Substrates Fabricated by High-Temperature Annealing on Electron Mobility in n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors on (110) Si (Special Issue : Solid State Devices and Materials)
• Novel disposable flexible bioreactor for Escherichia coli culture in orbital shaking incubator(MICROBIAL PHYSIOLOGY AND BIOTECHNOLOGY)
• Elevated Lipoprotein-Associated Phospholipase A2 Is Associated with Progression of Nonculprit Lesions after Percutaneous Coronary Intervention

もっと見る 閉じる

スポンサーリンク