Controlling Anion Composition at Metal--Insulator--Semiconductor Interfaces on III--V Channels by Plasma Processing

スポンサーリンク

概要

• 論文の詳細を見る

• The anion composition of InGaAs surfaces was controlled by using plasma processing, and its effects on the metal--insulator--semiconductor (MIS) properties were investigated. On-line Auger electron spectroscopy showed that H2 plasma cleaning on InGaAs effectively reduced the surface oxides and removed approximately one monolayer of As. Following this by plasma nitridation successfully introduced approximately two monolayers of N; however, the nitrided layer also contained an oxide component. Although the electrical properties of the Al2O3/InGaAs capacitors were degraded by H2 plasma processing, subsequent nitridation restored well-behaved MIS characteristics to the devices. The channel mobility of MIS field-effect transistors with a nitride interface was higher than that of the control device.

• 2012-06-25

著者

• Yamada Hisashi

  Sumitomo Chemical

• TAKENAKA Mitsuru

  The University of Tokyo

• TAKAGI Shinichi

  The University of Tokyo

• Hata Masahiko

  Sumitomo Chemical

• Ohtake Akihiro

  National Institute For Materials Science

• Yasuda Tetsuji

  National Institute Of Advanced Industrial Science And Technology

• Miyata Noriyuki

  National Institute Of Advanced Industrial Science And Technology

• Urabe Yuji

  National Institute Of Advanced Industrial Science And Technology

• MAEDA Tatsuro

  National Institute of Advanced Industrial Science and Technology

• Yamada Hisashi

  Sumitomo Chemical Co., Ltd., Tsukuba, Ibaraki 300-3294, Japan

• Maeda Tatsuro

  National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8562, Japan

• Hoshii Takuya

  The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan

• Jevasuwan Wipakorn

  National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8562, Japan

• Lee Sunghoon

  The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan

• Hata Masahiko

  Sumitomo Chemical Co., Ltd., Tsukuba, Ibaraki 300-3294, Japan

• Takagi Shinichi

  The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan

• Yasuda Tetsuji

  National Institute for Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8562, Japan

関連論文

• Kelvin Probe Study of Dipole Formation and Annihilation at the HfO_2/Si Interface
• Self-Assembly of Symmetric GaAs Quantum Dots on (111)A Substrates : Suppression of Fine-Structure Splitting
• Non-Contact and Non-Destructive Measurement of Carrier Concentration of Nitrogen-Doped ZnSe by Reflectance Difference Spectroscopy
• Proposal of Selective Growth Technique Using Periodic Strain Field Caused by Misfit Dislocations
• Thin Body III-V-Semiconductor-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Fabricated Using Direct Wafer Bonding
• High Electron Mobility Metal-Insulator-Semiconductor Field-Effect Transistors Fabricated on (111)-Oriented InGaAs Channels
• Influence of 5/3 Ratio of Carbon-Doped p-GaAs on Current Gain and Its Thermal Stability in InGaP/GaAs HeterdunctionBipolmTransistors
• Effect of Interface Oxidation on the Electrical Characteristics of HfO_2/Ultrathin-Epitaxial-Ge/GaAs(100) Structures
• High Electron Mobility Ge n-Channel Metal--Insulator--Semiconductor Field-Effect Transistors Fabricated by the Gate-Last Process with the Solid Source Diffusion Technique
• Fabrication of HfO_xN_y dielectrics on Ge from HfN_x deposition
• Ultrathin Body InGaAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors with InP Passivation Layers on Si Substrates Fabricated by Direct Wafer Bonding
• Preparation and electrical characterization of CeO2 films for gate dielectrics application: comparative study of chemical vapor deposition and atomic layer deposition processes (Special issue: Dielectric thin films for future electron devices: science and
• ？？/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer Bonding
• Investigation of InAlAs Oxide/InP Metal–Oxide–Semiconductor Structures Formed by Wet Thermal Oxidation
• Electron Mobility Enhancement of Extremely Thin Body In_Ga_As-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Substrates by Metal-Oxide-Semiconductor Interface Buffer Layers
• Electron Mobility Degradation and Interface Dipole Formation in Direct-Contact HfO_2/Si Metal-Oxide-Semiconductor Field-Effect Transistors
• Self-Aligned Metal Source/Drain InxGa1-xAs n-Metal--Oxide--Semiconductor Field-Effect Transistors Using Ni--InGaAs Alloy
• III-V/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer Bonding
• Controlling Anion Composition at Metal--Insulator--Semiconductor Interfaces on III--V Channels by Plasma Processing
• Influence of V/III Ratio of Carbon-Doped p-GaAs on Current Gain and Its Thermal Stability in InGaP/GaAs Heterojunction Bipolar Transistors
• Impact of Cation Surface Termination on the Electrical Characteristics of HfO2/InGaAs(001) Metal--Oxide--Semiconductor Capacitors
• Reduction in Interface Trap Density of Al
• Characterization of Monolayer Oxide Formation Processes on High-Index Si Surfaces by Photoelectron Spectroscopy with Synchrotron Radiation

もっと見る 閉じる

スポンサーリンク