Preparation and electrical characterization of CeO2 films for gate dielectrics application: comparative study of chemical vapor deposition and atomic layer deposition processes (Special issue: Dielectric thin films for future electron devices: science and
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
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Yasuda Tetsuji
National Institute Of Advanced Industrial Science And Technology
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IWAI Hiroshi
Interdisciplinary Graduate School of Science and Technology, Tokyo Institute of Technology
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Urabe Yuji
National Institute Of Advanced Industrial Science And Technology
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Kouda Miyuki
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8562, Japan
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Ozawa Kenji
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8562, Japan
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Kakushima Kuniyuki
Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Ahmet Parhat
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Yasuda Tetsuji
National Institute for Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8562, Japan
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