Influence of V/III Ratio of Carbon-Doped p-GaAs on Current Gain and Its Thermal Stability in InGaP/GaAs Heterojunction Bipolar Transistors
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概要
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The influence of the V/III ratio of carbon-doped p-GaAs on current gain and its thermal stability in InGaP/GaAs heterojunction bipolar transistors (HBTs) was studied. We have grown p-GaAs bulk layers and InGaP/GaAs HBTs at a growth temperature of 620 °C with V/III ratios between 0.35 and 25 employing CBrCl3 as a carbon source using a mass production metal–organic chemical vapor deposition instrument. We have found that a V/III ratio of 0.7 showed high current gain; however, the V/III ratio of 0.7 degrades under thermal annealing. On the other hand, a V/III ratio of 25 represents a significant improvement in thermal stability. Time resolved photo-luminescence revealed that the lifetime for the V/III ratio of 0.7 decreased with increasing annealing time, while the lifetime for the V/III ratio of 25 remained unchanged. These results suggest that current gain degradation for the V/III ratio of 0.7 is caused by the creation of recombination centers in the base layer.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-05-15
著者
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Yamada Hisashi
Sumitomo Chemical
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Fukuhara Noboru
Sumitomo Chemical
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Hata Masahiko
Sumitomo Chemical
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Fukuhara Noboru
Sumitomo Chemical Co., Ltd., Tsukuba Research Laboratory, 6 Kitahara, Tsukuba, Ibaraki 300-3294, Japan
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Yamada Hisashi
Sumitomo Chemical Co., Ltd., Tsukuba Research Laboratory, 6 Kitahara, Tsukuba, Ibaraki 300-3294, Japan
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Hata Masahiko
Sumitomo Chemical Co., Ltd., Tsukuba Research Laboratory, 6 Kitahara, Tsukuba, Ibaraki 300-3294, Japan
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