Influence of 5/3 Ratio of Carbon-Doped p-GaAs on Current Gain and Its Thermal Stability in InGaP/GaAs HeterdunctionBipolmTransistors

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文

著者

• Fukuhara Noboru

  Sumitomo Chemical

• Hata Masahiko

  Sumitomo Chemical

関連論文

• Thin Body III-V-Semiconductor-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Fabricated Using Direct Wafer Bonding
• High Electron Mobility Metal-Insulator-Semiconductor Field-Effect Transistors Fabricated on (111)-Oriented InGaAs Channels
• The effect of n-GaAs carrier concentration on current gain in InGaP/GaAs heterojunction bipolar transistors
• Influence of 5/3 Ratio of Carbon-Doped p-GaAs on Current Gain and Its Thermal Stability in InGaP/GaAs HeterdunctionBipolmTransistors
• Ultrathin Body InGaAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors with InP Passivation Layers on Si Substrates Fabricated by Direct Wafer Bonding
• ？？/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer Bonding
• Investigation of InAlAs Oxide/InP Metal–Oxide–Semiconductor Structures Formed by Wet Thermal Oxidation
• Electron Mobility Enhancement of Extremely Thin Body In_Ga_As-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Substrates by Metal-Oxide-Semiconductor Interface Buffer Layers
• Self-Aligned Metal Source/Drain InxGa1-xAs n-Metal--Oxide--Semiconductor Field-Effect Transistors Using Ni--InGaAs Alloy
• III-V/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer Bonding
• Controlling Anion Composition at Metal--Insulator--Semiconductor Interfaces on III--V Channels by Plasma Processing
• Influence of V/III Ratio of Carbon-Doped p-GaAs on Current Gain and Its Thermal Stability in InGaP/GaAs Heterojunction Bipolar Transistors
• Reduction in Interface Trap Density of Al

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