Investigation of InAlAs Oxide/InP Metal–Oxide–Semiconductor Structures Formed by Wet Thermal Oxidation

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概要

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• This study presents III–V metal–oxide–semiconductor (MOS) structures formed by the wet thermal oxidation of an epitaxial InAlAs layer grown on an InP substrate. Since the III–V compounds require a lower process temperature than that of the standard Si complementary MOS process, the InAlAs oxide layer was formed by wet thermal oxidation at 525 °C. The composition of the oxide layer evaluated by X-ray photoelectron spectroscopy (XPS) revealed that the oxide layer was composed of In, Al, and P oxides without any As oxide. The InAlAs oxide/InP MOS capacitors showed well-behaved capacitance–voltage ($C$–$V$) curves with a small frequency dispersion. The MOS interface properties were evaluated by the conductance method, and the minimum interface trap density of around $10^{12}$ cm-2 eV-1 was obtained.

• 2009-04-25

著者

• Hata Masahiko

  Sumitomo Chemical

• Yokoyama Masafumi

  Department Of Electrical Engineering And Information Systems The University Of Tokyo

• Takagi Shinichi

  Department Of Electrical Engineering And Information Systems The University Of Tokyo

• ICHIKAWA Osamu

  Sumitomo Chemical Co., Ltd.

• Takagi Shinichi

  Department of Electrical Engineering and Information Systems, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

• Nakagawa Shota

  Department of Electrical Engineering and Information Systems, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

• Tanaka Masaaki

  Sumitomo Chemical, 6 Kitahara, Tukuba, Ibaraki 300-3294, Japan

• Takenaka Mituru

  Sumitomo Chemical, 6 Kitahara, Tukuba, Ibaraki 300-3294, Japan

• Ichikawa Osamu

  Sumitomo Chemical, 6 Kitahara, Tukuba, Ibaraki 300-3294, Japan

• Hata Masahiko

  Sumitomo Chemical, 6 Kitahara, Tukuba, Ibaraki 300-3294, Japan

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