High Electron Mobility Ge n-Channel Metal--Insulator--Semiconductor Field-Effect Transistors Fabricated by the Gate-Last Process with the Solid Source Diffusion Technique

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概要

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• We fabricate high-$k$/Ge n-channel metal--insulator--semiconductor field-effect transistors (MISFETs) by the gate-last process with the thermal solid source diffusion to achieve both of high quality source/drain (S/D) and gate stack. The n+/p junction formed by solid source diffusion technique of Sb dopant shows the excellent diode characteristics of ${\sim}1.5\times 10^{5}$ on/off ratio between +1 and $-1$ V and the quite low reverse current density of ${\sim}4.1\times 10^{-4}$ A/cm2 at +1 V after the fabrication of high-$k$/Ge n-channel MISFETs that enable us to observe well-behaved transistor performances. The extracted electron mobility with the peak of 891 cm2/(V$\cdot$s) is high enough to be superior to the Si universal electron mobility especially in low $E_{\text{eff}}$.

• 2010-06-25

著者

• Morita Yukinori

  Nanodevice Innovation Research Center National Institute Of Advanced Industrial Science And Technolo

• Maeda Tatsuro

  Nanodevice Innovation Research Center National Institute Of Advanced Industrial Science And Technolo

• TAKAGI Shinichi

  The University of Tokyo

• Morita Yukinori

  Nanodevice Innovation Research Center National Institute Of Advanced Industrial Science And Technolo

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