Proposal of Selective Growth Technique Using Periodic Strain Field Caused by Misfit Dislocations
スポンサーリンク
概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2004-11-01
著者
-
Ohno Tomoya
Department Of Material Science Graduate School Of Engineering Shizuoka University
-
KOGUCHI Nobuyuki
National Institute for Materials Science
-
TSUKAMOTO Shiro
National Research Institute for Metals
-
Koguchi N
Sci. Univ. Tokyo Chiba Jpn
-
Ohtake Akihiro
Joint Research Center For Atom Technology (jrcat):angstrom Technology Partnership (atp)
-
Ohtake Akihiro
National Institute For Materials Science (nims)
-
OYAMA Norihisa
National Institute for Materials Science (NIMS)
-
OHNO Takahisa
National Institute for Materials Science (NIMS)
-
Ohno T
Department Of Material Science Graduate School Of Engineering Shizuoka University
-
Ohno Takahisa
National Institute For Materials Science
-
Tsukamoto S
The Anan National College Of Technology
-
Ohtake Akihiro
National Institute For Materials Science
関連論文
- Preparation of Tethered Palladium Catalysis Supported on Gold(111) and Its Surface Characterization by X-ray Photoelectron Spectroscopy (XPS)
- DETECTION OF CATHEPSIN B-LIKE ENZYME ACTIVITY IN MOUSE EPIDERMIS
- Acanthotic Type of Eccrine Poroma on the Arm : Report of a Case
- Paralytic Ileus Associated with a Combination of Dacarbazine-Nimustine Hydrochloride-Vincristine Chemotherapy
- Prurigo Nodularis Associated with Advanced Gastric Cancer : Report of a Case
- Stress engineering of the alkoxide derived ferroelectric thin film on Si wafer
- Size effect for lead zirconate titanate nano-particles with PZT(40/60) composition
- Effect of monodispersed silica nanoparticles on DNA separation by micro-capillary electrophoresis
- Effect of Back-Etching on Residual Stress in Lead Titanate Thin Films on Si Wafer
- Size Effect for Lead Zirconium Titanate Nanopowders with Pb(Zr_Ti_)O_3 Composition
- Raman Studies of the Effects of Nb Dopant on the Ferroelectric Properties in Lead Titanate Thin Film
- Low-Temperature Processing of Pb(Zr_ Ti_)O_3 Thin Films by Sol-Gel Casting
- Photon Correlation in GaAs Self-Assembled Quantum Dots
- Fabrication of Self-Assembled GaAs/AlGaAs Quantum Dots by Low-Temperature Droplet Epitaxy
- InAs Quantum Dots Growth by Modified Droplet Epitaxy Using Sulfur Termination
- Highly Reactive Organopalladium Catalyst Formed on Sulfur-Terminated GaAs(001)-(2 × 6) Surface
- Novel Palladium Catalyst Supported on GaAs(001) Passivated by Ammonium Sulfide
- Novel Organopalladium Material Formed on a Sulfur-Terminated GaAs(001) Surface
- Self-Assembly of Symmetric GaAs Quantum Dots on (111)A Substrates : Suppression of Fine-Structure Splitting
- Non-Contact and Non-Destructive Measurement of Carrier Concentration of Nitrogen-Doped ZnSe by Reflectance Difference Spectroscopy
- New Self-Organized Growth Method for InGaAs Quantum Dots on GaAs(001) Using Droplet Epitaxy
- Proposal of Selective Growth Technique Using Periodic Strain Field Caused by Misfit Dislocations
- Stoichiometry Study of S-Terminated GaAs(001)-(2×6)Surface with Synchrotron Radiation Photoelectron Spectoscopy
- Growth of GaAs Epitaxial Microcrystals on an S-Terminated GaAs Substrate by Successive Irradiation of Ga and As Molecular Beams
- Phenomenological Theory of Semiconductor Epitaxial Growth with Misfit-Dislocations
- MBE Growth Method for Pyramid-Shaped GaAs Micro Crystals on ZnSe(001) Surface Using Ga Droplets
- A Possible Origin of Carrier Doping into DNA(Cross-disciplinary Physics and Related Areas of Science and Technology)
- Scanning Tunneling Microscopy of the GaAs(001) Surface Reconstructions(STM-GaAs)
- Effect of Interface Oxidation on the Electrical Characteristics of HfO_2/Ultrathin-Epitaxial-Ge/GaAs(100) Structures
- Microscopic Effect of Nitrogen Doping on Dielectric Constant of Hf-silicate
- Properties of a Microchannel Plate Operatedin the Reflection Mode as an Energy- and Angle-Resolved Detector for Low-Energy Positive Ions
- The Energetics of Hut-Cluster Self-Assembly in Ge/Si(001) from Linear-Scaling DFT Calculations(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- SiOCH Films with Hydrocarbon Network Bonds : First-Principles Investigation
- Hydrocarbon Groups and Film Properties of SiOCH Dielectrics : Theoretical Investigations using Molecular Models
- Fabrication of GaAs Quantum Dots by Modified Droplet Epitaxy
- First-Principles Calculation Software for Dielectric Response Study of High-k Materials
- Solid Solubility Determination and Single Crystal Preparation of New Quaternary Solid Solution System of (Pb_Ge_x)(S_Se_z)
- 2P-030 Structural modelling of human Aryl hydrocarbon receptor and QM/MM study of its interaction with dioxins(The 46th Annual Meeting of the Biophysical Society of Japan)
- New Quaternary Semiconductor Material Pb_Mn_xS_Se_y for Mid-IR Lasers : Semiconductors and Semiconductor Devices
- 2×6 Surface Reconstruction of in situ Sulfur-Terminated GaAs(001) Observed by Scanning Tunneling Microscopy
- Work Function Changes of GaAs Surfaces Induced by Se treatment
- Impact of cation surface termination on the electrical characteristics of HfO2/InGaAs(001) metal-oxide-semiconductor capacitors (Special issue: Dielectric thin films for future electron devices: science and technology)
- Atomic-scale Effects of Hydrogen in Iron toward Hydrogen Embrittlement : Ab-initio Study
- Hydrogen-Promoted Grain Boundary Embrittlement and Vacancy Activity in Metals : Insights from Ab Initio Total Energy Calculatons
- F Atom Adsorption on the Fluorinated Si(001) Surface
- Electron-Beam-Induced Deposition of Fe Nanoparticles and Thin Films on SrTiO3 Substrates
- Theoretical Scanning Tunneling Microscopy Images of the Ga-rich GaAs(001)-(4×2) Surface(STM-GaAs)
- Hafnium 4f Core-level Shifts Caused by Nitrogen Incorporation in Hf-based High-$k$ Gate Dielectrics
- First-Principles Study of Dielectric Properties of Amorphous High-$k$ Materials
- Controlling Anion Composition at Metal--Insulator--Semiconductor Interfaces on III--V Channels by Plasma Processing
- The Energetics of Hut-Cluster Self-Assembly in Ge/Si(001) from Linear-Scaling DFT Calculations
- First-Principles Study of the Step Oxidation at Vicinal Si(001) Surfaces
- Impact of Cation Surface Termination on the Electrical Characteristics of HfO2/InGaAs(001) Metal--Oxide--Semiconductor Capacitors
- New Quaternary Semiconductor Material Pb1-xCdxS1-ySey for Lattice-Matched Heterostructure Lasers with Emission Wavelength around 3 $\mu$m
- Authers' Reply