2×6 Surface Reconstruction of in situ Sulfur-Terminated GaAs(001) Observed by Scanning Tunneling Microscopy
スポンサーリンク
概要
- 論文の詳細を見る
We present atomic-resolution images, obtained with scanning tunneling microscopy (STM), of smooth, in situ prepared, sulfur-terminated (S-terminated) GaAs(001) surface reconstruction. It is found that 2×6 surface reconstruction is dominant on the S-terminated GaAs(001) surface. This 2×6 surface reconstruction, of which the cell contains five S-S adatom dimers, is determined by both STM and reflection high-energy electron diffraction. Atomic models, which are consistent with both STM images and electron-counting heuristics, are also shown.
- 社団法人応用物理学会の論文
- 1994-08-15
著者
-
KOGUCHI Nobuyuki
National Institute for Materials Science
-
TSUKAMOTO Shiro
National Research Institute for Metals
関連論文
- Photon Correlation in GaAs Self-Assembled Quantum Dots
- Fabrication of Self-Assembled GaAs/AlGaAs Quantum Dots by Low-Temperature Droplet Epitaxy
- InAs Quantum Dots Growth by Modified Droplet Epitaxy Using Sulfur Termination
- Novel Organopalladium Material Formed on a Sulfur-Terminated GaAs(001) Surface
- New Self-Organized Growth Method for InGaAs Quantum Dots on GaAs(001) Using Droplet Epitaxy
- Proposal of Selective Growth Technique Using Periodic Strain Field Caused by Misfit Dislocations
- Stoichiometry Study of S-Terminated GaAs(001)-(2×6)Surface with Synchrotron Radiation Photoelectron Spectoscopy
- Growth of GaAs Epitaxial Microcrystals on an S-Terminated GaAs Substrate by Successive Irradiation of Ga and As Molecular Beams
- MBE Growth Method for Pyramid-Shaped GaAs Micro Crystals on ZnSe(001) Surface Using Ga Droplets
- Fabrication of GaAs Quantum Dots by Modified Droplet Epitaxy
- Solid Solubility Determination and Single Crystal Preparation of New Quaternary Solid Solution System of (Pb_Ge_x)(S_Se_z)
- New Quaternary Semiconductor Material Pb_Mn_xS_Se_y for Mid-IR Lasers : Semiconductors and Semiconductor Devices
- 2×6 Surface Reconstruction of in situ Sulfur-Terminated GaAs(001) Observed by Scanning Tunneling Microscopy
- Electron-Beam-Induced Deposition of Fe Nanoparticles and Thin Films on SrTiO3 Substrates
- New Quaternary Semiconductor Material Pb1-xCdxS1-ySey for Lattice-Matched Heterostructure Lasers with Emission Wavelength around 3 $\mu$m
- Authers' Reply