New Quaternary Semiconductor Material Pb1-xCdxS1-ySey for Lattice-Matched Heterostructure Lasers with Emission Wavelength around 3 $\mu$m
スポンサーリンク
概要
- 論文の詳細を見る
The energy gap and the refractive index of a new quaternary semiconducting material, Pb1-xCdxS1-ySey, are determined experimentally. The compositional and temperature dependence of the energy gap of this material is $E(x, y, T){=}4.05 x-0.141 y-7.37 x^{2}-0.00904 y^{2}+0.115 xy+0.267+(4\times 10^{-4}+2.65\times 10^{-7}T^{2})^{1/2}$ (eV). The refractive index is $n(x, y){=}4.20\text{--}6.20x+0.483y+9.89x^{2}+0.106y^{2}+1.98xy$ for the wavelength of 3.08 $\mu$m at room temperature. It becomes evident that the quaternary solid solution is a suitable material lattice-matched to PbS for the confinement layers of double-heterostructure lasers. $4.05x-0.141y-7.37x^{2}-0.00904y^{2}+0.115xy$
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1989-07-20
著者
-
TAKAHASHI Satoshi
National Institute of Information and Communications Technology
-
KOGUCHI Nobuyuki
National Institute for Materials Science
-
KIYOSAWA Teruo
National Research Institute for Metals
-
Koguchi Nobuyuki
National Research Institute for Metals, Tsukuba Laboratories, 1-2-1 Sengen, Tsukuba, Ibaraki 305
-
Takahashi Satoshi
National Research Institute for Metals, Tsukuba Laboratories, 1-2-1 Sengen, Tsukuba, Ibaraki 305
関連論文
- Stochastic Method of Determining Substream Modulation Levels for MIMO Eigenbeam Space Division Multiplexing
- Effect of Delay Spread Enhancement in MIMO Eigenbeam Space Division Multiplexing Transmission
- Differential Modulated Pilot Symbol Assisted Adaptive OFDM for Reducing the MLI with Predicted FBI
- Adaptive Sub-carrier Block Modulation with Differentially Modulated Pilot Symbol Assistance for Down-link OFDM Using Up-link Delay Spread
- Adaptive Sub-carrier Block Modulation with Differentially Modulated Pilot Symbol Assistance for Down-link OFDM Using Up-link Delay Spread
- Differential Modulated Pilot Symbol Assisted Adaptive OFDM for Reducing the MLI with Predicted FBI
- Differential Modulated Pilot Symbol Assisted Adaptive OFDM for Reducing the MLI with Predicted FBI
- Photon Correlation in GaAs Self-Assembled Quantum Dots
- Fabrication of Self-Assembled GaAs/AlGaAs Quantum Dots by Low-Temperature Droplet Epitaxy
- InAs Quantum Dots Growth by Modified Droplet Epitaxy Using Sulfur Termination
- Effects of Film Thickness and Annealing Conditions on 2223 Phase Growth in BSCCO Films Produced by Pb Vapor Doping
- Proposal of Selective Growth Technique Using Periodic Strain Field Caused by Misfit Dislocations
- Stoichiometry Study of S-Terminated GaAs(001)-(2×6)Surface with Synchrotron Radiation Photoelectron Spectoscopy
- Growth of GaAs Epitaxial Microcrystals on an S-Terminated GaAs Substrate by Successive Irradiation of Ga and As Molecular Beams
- MBE Growth Method for Pyramid-Shaped GaAs Micro Crystals on ZnSe(001) Surface Using Ga Droplets
- Fabrication of GaAs Quantum Dots by Modified Droplet Epitaxy
- Solid Solubility Determination and Single Crystal Preparation of New Quaternary Solid Solution System of (Pb_Ge_x)(S_Se_z)
- New Quaternary Semiconductor Material Pb_Mn_xS_Se_y for Mid-IR Lasers : Semiconductors and Semiconductor Devices
- 2×6 Surface Reconstruction of in situ Sulfur-Terminated GaAs(001) Observed by Scanning Tunneling Microscopy
- Electron-Beam-Induced Deposition of Fe Nanoparticles and Thin Films on SrTiO3 Substrates
- New Quaternary Semiconductor Material Pb1-xCdxS1-ySey for Lattice-Matched Heterostructure Lasers with Emission Wavelength around 3 $\mu$m
- Authers' Reply