Authers' Reply
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概要
- 論文の詳細を見る
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1990-08-20
著者
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TAKAHASHI Satoshi
National Institute of Information and Communications Technology
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KOGUCHI Nobuyuki
National Institute for Materials Science
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KIYOSAWA Teruo
National Research Institute for Metals
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- Adaptive Sub-carrier Block Modulation with Differentially Modulated Pilot Symbol Assistance for Down-link OFDM Using Up-link Delay Spread
- Differential Modulated Pilot Symbol Assisted Adaptive OFDM for Reducing the MLI with Predicted FBI
- Differential Modulated Pilot Symbol Assisted Adaptive OFDM for Reducing the MLI with Predicted FBI
- Photon Correlation in GaAs Self-Assembled Quantum Dots
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- Effects of Film Thickness and Annealing Conditions on 2223 Phase Growth in BSCCO Films Produced by Pb Vapor Doping
- Proposal of Selective Growth Technique Using Periodic Strain Field Caused by Misfit Dislocations
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- Growth of GaAs Epitaxial Microcrystals on an S-Terminated GaAs Substrate by Successive Irradiation of Ga and As Molecular Beams
- MBE Growth Method for Pyramid-Shaped GaAs Micro Crystals on ZnSe(001) Surface Using Ga Droplets
- Fabrication of GaAs Quantum Dots by Modified Droplet Epitaxy
- Solid Solubility Determination and Single Crystal Preparation of New Quaternary Solid Solution System of (Pb_Ge_x)(S_Se_z)
- New Quaternary Semiconductor Material Pb_Mn_xS_Se_y for Mid-IR Lasers : Semiconductors and Semiconductor Devices
- 2×6 Surface Reconstruction of in situ Sulfur-Terminated GaAs(001) Observed by Scanning Tunneling Microscopy
- Electron-Beam-Induced Deposition of Fe Nanoparticles and Thin Films on SrTiO3 Substrates
- New Quaternary Semiconductor Material Pb1-xCdxS1-ySey for Lattice-Matched Heterostructure Lasers with Emission Wavelength around 3 $\mu$m
- Authers' Reply