Fabrication of GaAs Quantum Dots by Modified Droplet Epitaxy
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概要
- 論文の詳細を見る
We propose a modified droplet epitaxy method for fabricating self-organized GaAs/AlGaAs quantum dots(QDs)with a high As flux irradiation and a low substrate temperature. By our novel method, GaAs QDs were successfully formed, retaining their pyramidal shape, original base size and density of droplets, and preventing layer-by-layer growth. Quantum size effects of the QDs were distinctly observed by photoluminescence measurements. It was confirmed that this new modified droplet epitaxy method is promising for fabricating a high-quality GaAs/AlGaAs QD system.
- 社団法人応用物理学会の論文
- 2000-02-01
著者
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GOTOH Yoshihiko
Department of Materials Science and Technology, Science University of Tokyo
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KOGUCHI Nobuyuki
National Institute for Materials Science
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Gotoh Yoshihiko
Department Of Materials Science And Technology Science University Of Tokyo
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WATANABE Katsuyuki
National Research Institute for Metals
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Watanabe Katsuyuki
National Research Institute For Metals:department Of Materials Science And Technology Science Univer
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Koguchi Nobuyuki
National Research Institute For Metals:department Of Materials Science And Technology Science Univer
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