Growth of GaAs Epitaxial Microcrystals on an S-Terminated GaAs Substrate by Successive Irradiation of Ga and As Molecular Beams

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1993-05-15

著者

• KOGUCHI Nobuyuki

  National Institute for Materials Science

• Koguchi N

  Sci. Univ. Tokyo Chiba Jpn

• ISHIGE Keiko

  National Research Institute for Metals, Tsukuba Laboratories

• Ishige Keiko

  National Research Institute For Metals Tsukuba Laboratories

関連論文

• Photon Correlation in GaAs Self-Assembled Quantum Dots
• Fabrication of Self-Assembled GaAs/AlGaAs Quantum Dots by Low-Temperature Droplet Epitaxy
• InAs Quantum Dots Growth by Modified Droplet Epitaxy Using Sulfur Termination
• New Self-Organized Growth Method for InGaAs Quantum Dots on GaAs(001) Using Droplet Epitaxy
• Proposal of Selective Growth Technique Using Periodic Strain Field Caused by Misfit Dislocations
• Stoichiometry Study of S-Terminated GaAs(001)-(2×6)Surface with Synchrotron Radiation Photoelectron Spectoscopy
• Growth of GaAs Epitaxial Microcrystals on an S-Terminated GaAs Substrate by Successive Irradiation of Ga and As Molecular Beams
• MBE Growth Method for Pyramid-Shaped GaAs Micro Crystals on ZnSe(001) Surface Using Ga Droplets
• Fabrication of GaAs Quantum Dots by Modified Droplet Epitaxy
• Solid Solubility Determination and Single Crystal Preparation of New Quaternary Solid Solution System of (Pb_Ge_x)(S_Se_z)
• New Quaternary Semiconductor Material Pb_Mn_xS_Se_y for Mid-IR Lasers : Semiconductors and Semiconductor Devices
• 2×6 Surface Reconstruction of in situ Sulfur-Terminated GaAs(001) Observed by Scanning Tunneling Microscopy
• Electron-Beam-Induced Deposition of Fe Nanoparticles and Thin Films on SrTiO3 Substrates
• New Quaternary Semiconductor Material Pb1-xCdxS1-ySey for Lattice-Matched Heterostructure Lasers with Emission Wavelength around 3 $\mu$m
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