F Atom Adsorption on the Fluorinated Si(001) Surface

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概要

• 論文の詳細を見る
• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 2001-04-01

著者

• Ohno T

  National Research Institute For Metals

• Ohno Takahisa

  National Institute For Materials Science

• Ohno Takahisa

  Computational Materials Science Center National Institute For Materials Science

• Ohno Takahisa

  National Research Institute For Metals

• Ohno Takahisa

  First Principles Simulation Group Computational Materials Science Center National Institute For Mate

• Ohno Takahisa

  Science University Of Tokyo

• EZAKI Takahide

  Science University of Tokyo

関連論文

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• Stoichiometry Study of S-Terminated GaAs(001)-(2×6)Surface with Synchrotron Radiation Photoelectron Spectoscopy
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• A Possible Origin of Carrier Doping into DNA(Cross-disciplinary Physics and Related Areas of Science and Technology)
• Scanning Tunneling Microscopy of the GaAs(001) Surface Reconstructions(STM-GaAs)
• Microscopic Effect of Nitrogen Doping on Dielectric Constant of Hf-silicate
• The Energetics of Hut-Cluster Self-Assembly in Ge/Si(001) from Linear-Scaling DFT Calculations(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
• SiOCH Films with Hydrocarbon Network Bonds : First-Principles Investigation
• Hydrocarbon Groups and Film Properties of SiOCH Dielectrics : Theoretical Investigations using Molecular Models
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• End-Group Dependence of Transport Properties for Biphenyl-Based Molecular Junction System
• 2P-030 Structural modelling of human Aryl hydrocarbon receptor and QM/MM study of its interaction with dioxins(The 46th Annual Meeting of the Biophysical Society of Japan)
• Work Function Changes of GaAs Surfaces Induced by Se treatment
• Atomic-scale Effects of Hydrogen in Iron toward Hydrogen Embrittlement : Ab-initio Study
• Hydrogen-Promoted Grain Boundary Embrittlement and Vacancy Activity in Metals : Insights from Ab Initio Total Energy Calculatons
• F Atom Adsorption on the Fluorinated Si(001) Surface
• Theoretical Scanning Tunneling Microscopy Images of the Ga-rich GaAs(001)-(4×2) Surface(STM-GaAs)
• Migration-Enhanced Epitaxy of Cubic BN: An Ab Initio Study
• Hafnium 4f Core-level Shifts Caused by Nitrogen Incorporation in Hf-based High-$k$ Gate Dielectrics
• First-Principles Study of Dielectric Properties of Amorphous High-$k$ Materials
• Paramagnetic Defect Spin Centers in Porous SiOCH Film Investigated Using Electron Spin Resonance
• The Energetics of Hut-Cluster Self-Assembly in Ge/Si(001) from Linear-Scaling DFT Calculations
• Guiding Principle of Energy Level Controllability of Silicon Dangling Bonds in HfSiON
• Ultraviolet-Curing Mechanism of Porous-SiOC
• First-Principles Study of the Step Oxidation at Vicinal Si(001) Surfaces
• Carbon-Doped Silicon Oxide Films with Hydrocarbon Network Bonds for Low-$k$ Dielectrics: Theoretical Investigations
• Physical Guiding Principles for High Quality Resistive Random Access Memory Stack with Al
• F Atom Adsorption on the Fluorinated Si(001) Surface

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