Hydrocarbon Groups and Film Properties of SiOCH Dielectrics : Theoretical Investigations using Molecular Models
スポンサーリンク
概要
- 論文の詳細を見る
- 2005-09-13
著者
-
Kobayashi Nobuyoshi
Semiconductor Leading Edge Technologies Inc. (selete)
-
INOUE Minoru
TAIYO NIPPON SANSO CORPORATION
-
HASAKA Satoshi
TAIYO NIPPON SANSO CORPORATION
-
Ohno T
National Research Institute For Metals
-
Ohno Takahisa
National Institute For Materials Science
-
Ohno Takahisa
Computational Materials Science Center National Institute For Materials Science
-
Ohno Takahisa
National Research Institute For Metals
-
TAJIMA Nobuo
First Principles Simulation Group, Computational Materials Science Center, National Institute for Ma
-
HAMADA Tomoyuki
The FSIS Center for Collaborative Research, Institute of Industrial Science, University of Tokyo
-
OHNO Takahisa
First Principles Simulation Group, Computational Materials Science Center, National Institute for Ma
-
YONEDA Katsumi
Semiconductor Leading Edge Technologies, Inc. (Selete)
-
YONEDA Katsumi
Research Dept. 1, Semiconductor Leading Edge Technologies, Inc. (Selete)
-
KOBAYASHI Nobuyoshi
Research Dept. 1, Semiconductor Leading Edge Technologies, Inc. (Selete)
-
Ohno Takahisa
First Principles Simulation Group Computational Materials Science Center National Institute For Mate
-
Hamada Tomoyuki
The Fsis Center For Collaborative Research Institute Of Industrial Science University Of Tokyo
-
Tajima Nobuo
First Principles Simulation Group Computational Materials Science Center National Institute For Mate
-
Yoneda Katsumi
Semiconductor Leading Edge Technologies Inc. (selete)
-
Ohno Takahisa
Science University Of Tokyo
-
Kobayashi Nobuyoshi
Research Department 1, Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan
-
Yoneda Katsumi
Research Department 1, Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan
-
TAJIMA Nobuo
First Department of Internal Medicine, Nagasaki University School of Medicine
関連論文
- Thermal Stability of the Yttrium Aluminate Film and the Suppression of its structural change and electrical properties degradation
- Proposal of Selective Growth Technique Using Periodic Strain Field Caused by Misfit Dislocations
- Stoichiometry Study of S-Terminated GaAs(001)-(2×6)Surface with Synchrotron Radiation Photoelectron Spectoscopy
- Isobutyl silane precursors for SiCH low-k cap layer beyond the 22nm node: analysis of film structure for compatibility of lower k-value and high barrier properties (Special issue: Advanced metallization for ULSI applications)
- Phenomenological Theory of Semiconductor Epitaxial Growth with Misfit-Dislocations
- A Possible Origin of Carrier Doping into DNA(Cross-disciplinary Physics and Related Areas of Science and Technology)
- Scanning Tunneling Microscopy of the GaAs(001) Surface Reconstructions(STM-GaAs)
- Novel via Chain Structure for Failure Analysis at 65 nm-Node Fixing OPC Using Inner and Outer via Chain Dummy Patterns(Microelectronic Test Structures)
- Microscopic Effect of Nitrogen Doping on Dielectric Constant of Hf-silicate
- The Energetics of Hut-Cluster Self-Assembly in Ge/Si(001) from Linear-Scaling DFT Calculations(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- SiOCH Films with Hydrocarbon Network Bonds : First-Principles Investigation
- Hydrocarbon Groups and Film Properties of SiOCH Dielectrics : Theoretical Investigations using Molecular Models
- First-Principles Calculation Software for Dielectric Response Study of High-k Materials
- Novel precursors for SiCH low-k caps beyond the 22nm node: reactions of silacyclopentane precursors in the plasma-enhanced chemical vapor deposition process and structural analyses of SiCH films (Special issue: Dry process)
- End-Group Dependence of Transport Properties for Biphenyl-Based Molecular Junction System
- 2P-030 Structural modelling of human Aryl hydrocarbon receptor and QM/MM study of its interaction with dioxins(The 46th Annual Meeting of the Biophysical Society of Japan)
- Work Function Changes of GaAs Surfaces Induced by Se treatment
- Atomic-scale Effects of Hydrogen in Iron toward Hydrogen Embrittlement : Ab-initio Study
- Hydrogen-Promoted Grain Boundary Embrittlement and Vacancy Activity in Metals : Insights from Ab Initio Total Energy Calculatons
- F Atom Adsorption on the Fluorinated Si(001) Surface
- Theoretical Scanning Tunneling Microscopy Images of the Ga-rich GaAs(001)-(4×2) Surface(STM-GaAs)
- Migration-Enhanced Epitaxy of Cubic BN: An Ab Initio Study
- Hafnium 4f Core-level Shifts Caused by Nitrogen Incorporation in Hf-based High-$k$ Gate Dielectrics
- First-Principles Study of Dielectric Properties of Amorphous High-$k$ Materials
- Supramolecular Chirality Measurement of an Optically Anomalous Single Crystal
- Effectiveness of Dimethyl Carbonate and Dipivaloyl Methane Chemicals for Internal Repair of Plasma-Damaged Low-$k$ Films
- Paramagnetic Defect Spin Centers in Porous SiOCH Film Investigated Using Electron Spin Resonance
- The Energetics of Hut-Cluster Self-Assembly in Ge/Si(001) from Linear-Scaling DFT Calculations
- Guiding Principle of Energy Level Controllability of Silicon Dangling Bonds in HfSiON
- Ultraviolet-Curing Mechanism of Porous-SiOC
- First-Principles Study of the Step Oxidation at Vicinal Si(001) Surfaces
- Carbon-Doped Silicon Oxide Films with Hydrocarbon Network Bonds for Low-$k$ Dielectrics: Theoretical Investigations
- Physical Guiding Principles for High Quality Resistive Random Access Memory Stack with Al
- A Case of Corrected Transposition of the Great Vessels without Associated Intracardiac Anomalies
- Pulsus Alternans Involving the Right Heart
- F Atom Adsorption on the Fluorinated Si(001) Surface