Kobayashi Nobuyoshi | Research Department 1, Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan
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概要
- Kobayashi Nobuyoshiの詳細を見る
- 同名の論文著者
- Research Department 1, Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japanの論文著者
関連著者
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Ohno Takahisa
Computational Materials Science Center National Institute For Materials Science
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YONEDA Katsumi
Research Dept. 1, Semiconductor Leading Edge Technologies, Inc. (Selete)
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Kobayashi Nobuyoshi
Research Department 1, Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan
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Yoneda Katsumi
Research Department 1, Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan
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Kobayashi Nobuyoshi
Semiconductor Leading Edge Technologies Inc. (selete)
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INOUE Minoru
TAIYO NIPPON SANSO CORPORATION
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HASAKA Satoshi
TAIYO NIPPON SANSO CORPORATION
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Ohno T
National Research Institute For Metals
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Ohno Takahisa
National Institute For Materials Science
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Ohno Takahisa
National Research Institute For Metals
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Nakao Shinichi
Research Dept. 2 Semiconductor Leading Edge Technologies Inc. (selete)
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TAJIMA Nobuo
First Principles Simulation Group, Computational Materials Science Center, National Institute for Ma
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HAMADA Tomoyuki
The FSIS Center for Collaborative Research, Institute of Industrial Science, University of Tokyo
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OHNO Takahisa
First Principles Simulation Group, Computational Materials Science Center, National Institute for Ma
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YONEDA Katsumi
Semiconductor Leading Edge Technologies, Inc. (Selete)
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KOBAYASHI Nobuyoshi
Research Dept. 1, Semiconductor Leading Edge Technologies, Inc. (Selete)
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Ohno Takahisa
First Principles Simulation Group Computational Materials Science Center National Institute For Mate
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Hamada Tomoyuki
The Fsis Center For Collaborative Research Institute Of Industrial Science University Of Tokyo
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Tajima Nobuo
First Principles Simulation Group Computational Materials Science Center National Institute For Mate
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Yoneda Katsumi
Semiconductor Leading Edge Technologies Inc. (selete)
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Ohno Takahisa
Science University Of Tokyo
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Kamigaki Yoshiaki
Department of Advanced Materials Science, Faculty of Engineering, Kagawa University, Takamatsu 761-0396, Japan
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Ushio Jiro
Computational Materials Science Center, National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan
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Kato Manabu
Research Department 1, Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan
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Hamada Tomoyuki
Collaborative Research Center for Frontier Simulation Software for Industrial Science, Institute of Industrial Science, University of Tokyo, Tokyo 153-8505, Japan
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Hamada Tomoyuki
Collaborative Research Center for Frontier Simulation Software for Industrial Science, Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8503, Japan
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Kondo Seiichi
Research Department 1, Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan
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TAJIMA Nobuo
First Department of Internal Medicine, Nagasaki University School of Medicine
著作論文
- Hydrocarbon Groups and Film Properties of SiOCH Dielectrics : Theoretical Investigations using Molecular Models
- Paramagnetic Defect Spin Centers in Porous SiOCH Film Investigated Using Electron Spin Resonance