Nakao Shinichi | Research Dept. 2 Semiconductor Leading Edge Technologies Inc. (selete)
スポンサーリンク
概要
- NAKAO Shinichiの詳細を見る
- 同名の論文著者
- Research Dept. 2 Semiconductor Leading Edge Technologies Inc. (selete)の論文著者
関連著者
-
Nakao Shinichi
Research Dept. 2 Semiconductor Leading Edge Technologies Inc. (selete)
-
Ogawa Shinichi
Research Dept. 2 Semiconductor Leading Edge Technologies Inc. (selete)
-
NAKAO Shinichi
Research Dept. 2, Semiconductor Leading Edge Technologies, Inc. (Selete)
-
KINOSHITA Keizo
Research Dept. 2, Semiconductor Leading Edge Technologies, Inc. (Selete)
-
Ohno Takahisa
Computational Materials Science Center National Institute For Materials Science
-
Kinoshita Keizo
Research Dept. 2 Semiconductor Leading Edge Technologies Inc. (selete)
-
YONEDA Katsumi
Research Dept. 1, Semiconductor Leading Edge Technologies, Inc. (Selete)
-
Kamigaki Yoshiaki
Department of Advanced Materials Science, Faculty of Engineering, Kagawa University, Takamatsu 761-0396, Japan
-
Ushio Jiro
Computational Materials Science Center, National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan
-
Kato Manabu
Research Department 1, Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan
-
Hamada Tomoyuki
Collaborative Research Center for Frontier Simulation Software for Industrial Science, Institute of Industrial Science, University of Tokyo, Tokyo 153-8505, Japan
-
Hamada Tomoyuki
Collaborative Research Center for Frontier Simulation Software for Industrial Science, Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8503, Japan
-
Kobayashi Nobuyoshi
Research Department 1, Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan
-
Kondo Seiichi
Research Department 1, Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan
-
Yoneda Katsumi
Research Department 1, Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan
著作論文
- Process Induced Damage Analysis of Low-k SiOCH Films Focusing on Siloxane Network and Methyl End Group
- Paramagnetic Defect Spin Centers in Porous SiOCH Film Investigated Using Electron Spin Resonance