Kamigaki Yoshiaki | Department of Advanced Materials Science, Faculty of Engineering, Kagawa University, Takamatsu 761-0396, Japan
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概要
- Kamigaki Yoshiakiの詳細を見る
- 同名の論文著者
- Department of Advanced Materials Science, Faculty of Engineering, Kagawa University, Takamatsu 761-0396, Japanの論文著者
関連著者
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Kamigaki Yoshiaki
Department of Advanced Materials Science, Faculty of Engineering, Kagawa University, Takamatsu 761-0396, Japan
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Aozasa Hiroshi
Department of Advanced Materials Science, Faculty of Engineering, Kagawa University, Takamatsu 761-0396, Japan
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MIYAGAWA Hayato
Department of Advanced Materials Science, Faculty of Engineering, Kagawa University
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Ohno Takahisa
Computational Materials Science Center National Institute For Materials Science
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Nakao Shinichi
Research Dept. 2 Semiconductor Leading Edge Technologies Inc. (selete)
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Liu Ziyuan
Device Analysis Technology Labs. Nec Corporation
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YONEDA Katsumi
Research Dept. 1, Semiconductor Leading Edge Technologies, Inc. (Selete)
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Ichinokawa Takeo
Department Of Applied Physics School Of Science And Engineering Waseda University
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Kamigaki Yoshiaki
Department Of Applied Physics Waseda University
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Ohtsuki Y.H.
Department of Physics, Waseda University
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Ohtsuki Y.h.
Department Of Physics Waseda University
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Ohtsuki Y.h.
Department Of Applied Physics Faculty Of Engineering University Of Tokyo
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Mitoh Hiroyuki
Department of Advanced Materials Science, Faculty of Engineering, Kagawa University, Takamatsu 761-0396, Japan
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Ando Shinichiro
Department of Advanced Materials Science, Faculty of Engineering, Kagawa University, Takamatsu 761-0396, Japan
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Koshiba Shyun
Department of Advanced Materials Science, Faculty of Engineering, Kagawa University, Takamatsu 761-0396, Japan
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Ishigaki Hirokazu
Devices and Analysis Technology Division, Renesas Electronics Corporation, Kawasaki 211-8668, Japan
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Koshiba Shyun
Department of Advanced Materials Science, Faculty of Engineering, Kagawa University, 2217-20 Hayashi-cho, Takamatsu 761-0396, Japan
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Miyagawa Hayato
Department of Advanced Materials Science, Faculty of Engineering, Kagawa University, Takamatsu 761-0396, Japan
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Ushio Jiro
Computational Materials Science Center, National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan
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Kato Manabu
Research Department 1, Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan
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Hamada Tomoyuki
Collaborative Research Center for Frontier Simulation Software for Industrial Science, Institute of Industrial Science, University of Tokyo, Tokyo 153-8505, Japan
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Hamada Tomoyuki
Collaborative Research Center for Frontier Simulation Software for Industrial Science, Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8503, Japan
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Kobayashi Nobuyoshi
Research Department 1, Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan
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Kondo Seiichi
Research Department 1, Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan
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Toki Atsushi
Department of Advanced Materials Science, Faculty of Engineering, Kagawa University, Takamatsu 761-0396, Japan
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Shinohara Noriaki
Department of Advanced Materials Science, Faculty of Engineering, Kagawa University, Takamatsu 761-0396, Japan
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Nakano Masayuki
Corporate Research and Development Group, Sharp Corporation, Tenri, Nara 632-8567, Japan
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Shibata Akihide
Corporate Research and Development Group, Sharp Corporation, Tenri, Nara 632-8567, Japan
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Okumine Tetsuya
Corporate Research and Development Group, Sharp Corporation, Tenri, Nara 632-8567, Japan
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Shiomi Takeshi
Corporate Research and Development Group, Sharp Corporation, Tenri, Nara 632-8567, Japan
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Sugimoto Kazuo
Corporate Research and Development Group, Sharp Corporation, Tenri, Nara 632-8567, Japan
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Negishi Tetsu
Corporate Research and Development Group, Sharp Corporation, Tenri, Nara 632-8567, Japan
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Yoshioka Fumiyoshi
Corporate Research and Development Group, Sharp Corporation, Tenri, Nara 632-8567, Japan
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Kotaki Hiroshi
Corporate Research and Development Group, Sharp Corporation, Tenri, Nara 632-8567, Japan
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Liu Ziyuan
Devices and Analysis Technology Division, Renesas Electronics Corporation, Kawasaki 211-8668, Japan
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Yoneda Katsumi
Research Department 1, Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan
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Fujiwara Ichiro
Advanced Device R&D Department, Semiconductor Technology Development Group, Semiconductor Business Unit, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
著作論文
- Electron Spin Resonance and Photoluminescence Study of Charge Trap Centers in Silicon Nitride Films and Fabrication of Proposed Oxide–Nitride–Oxide Sidewall 2-bit/Cell Nonvolatile Memories
- Energy Analysis of Kikuchi Patterns
- Electron Spin Resonance Observation of Bias-Temperature Stress-Induced Interface Defects at NO/N2O-Annealed Chemical-Vapor-Deposition SiO2/(100) p-Si Substrates
- Paramagnetic Defect Spin Centers in Porous SiOCH Film Investigated Using Electron Spin Resonance
- Analysis of Carrier Traps in Silicon Nitride Film with Discharge Current Transient Spectroscopy, Photoluminescence, and Electron Spin Resonance