Negishi Tetsu | Corporate Research and Development Group, Sharp Corporation, Tenri, Nara 632-8567, Japan

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概要

関連著者

Kamigaki Yoshiaki
Department of Advanced Materials Science, Faculty of Engineering, Kagawa University, Takamatsu 761-0396, Japan
Toki Atsushi
Department of Advanced Materials Science, Faculty of Engineering, Kagawa University, Takamatsu 761-0396, Japan
Shinohara Noriaki
Department of Advanced Materials Science, Faculty of Engineering, Kagawa University, Takamatsu 761-0396, Japan
Nakano Masayuki
Corporate Research and Development Group, Sharp Corporation, Tenri, Nara 632-8567, Japan
Shibata Akihide
Corporate Research and Development Group, Sharp Corporation, Tenri, Nara 632-8567, Japan
Okumine Tetsuya
Corporate Research and Development Group, Sharp Corporation, Tenri, Nara 632-8567, Japan
Shiomi Takeshi
Corporate Research and Development Group, Sharp Corporation, Tenri, Nara 632-8567, Japan
Sugimoto Kazuo
Corporate Research and Development Group, Sharp Corporation, Tenri, Nara 632-8567, Japan
Negishi Tetsu
Corporate Research and Development Group, Sharp Corporation, Tenri, Nara 632-8567, Japan
Yoshioka Fumiyoshi
Corporate Research and Development Group, Sharp Corporation, Tenri, Nara 632-8567, Japan
Kotaki Hiroshi
Corporate Research and Development Group, Sharp Corporation, Tenri, Nara 632-8567, Japan

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著作論文

Electron Spin Resonance and Photoluminescence Study of Charge Trap Centers in Silicon Nitride Films and Fabrication of Proposed Oxide–Nitride–Oxide Sidewall 2-bit/Cell Nonvolatile Memories

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