Electron Spin Resonance and Photoluminescence Study of Charge Trap Centers in Silicon Nitride Films and Fabrication of Proposed Oxide–Nitride–Oxide Sidewall 2-bit/Cell Nonvolatile Memories

スポンサーリンク

概要

• 論文の詳細を見る

• We have proposed a novel oxide–nitride–oxide (ONO)-sidewall 2-bit/cell nonvolatile memory and fabricated 70-nm-node nonvolatile memory devices. For low-pressure chemical-vapor-deposition (LPCVD)-SiN films, with increasing SiH4/NH3 mixture gas ratio, we have found from ESR and PL evaluation that the paramagnetic defect density increases and some PL emission energy levels become deeper. We consider that the energy-level shift is due to the effects of trap potential overlapping, where the trap centers are generated at the excess silicon atoms in the SiN films. In this study, a SiH4/NH3 mixture gas ratio of less than $1:100$ was used to suppress the potential overlapping. As a result, we have also shown that the proposed memory device has high performance and excellent scalability.

• 2008-04-25

著者

• Kamigaki Yoshiaki

  Department of Advanced Materials Science, Faculty of Engineering, Kagawa University, Takamatsu 761-0396, Japan

• Toki Atsushi

  Department of Advanced Materials Science, Faculty of Engineering, Kagawa University, Takamatsu 761-0396, Japan

• Shinohara Noriaki

  Department of Advanced Materials Science, Faculty of Engineering, Kagawa University, Takamatsu 761-0396, Japan

• Nakano Masayuki

  Corporate Research and Development Group, Sharp Corporation, Tenri, Nara 632-8567, Japan

• Shibata Akihide

  Corporate Research and Development Group, Sharp Corporation, Tenri, Nara 632-8567, Japan

• Okumine Tetsuya

  Corporate Research and Development Group, Sharp Corporation, Tenri, Nara 632-8567, Japan

• Shiomi Takeshi

  Corporate Research and Development Group, Sharp Corporation, Tenri, Nara 632-8567, Japan

• Sugimoto Kazuo

  Corporate Research and Development Group, Sharp Corporation, Tenri, Nara 632-8567, Japan

• Negishi Tetsu

  Corporate Research and Development Group, Sharp Corporation, Tenri, Nara 632-8567, Japan

• Yoshioka Fumiyoshi

  Corporate Research and Development Group, Sharp Corporation, Tenri, Nara 632-8567, Japan

• Kotaki Hiroshi

  Corporate Research and Development Group, Sharp Corporation, Tenri, Nara 632-8567, Japan

関連論文

• ATM is the Predominant Kinase Involved in the Phosphorylation of Histone H2AX after Heating
• Electron Spin Resonance and Photoluminescence Study of Charge Trap Centers in Silicon Nitride Films and Fabrication of Proposed Oxide–Nitride–Oxide Sidewall 2-bit/Cell Nonvolatile Memories
• Chemotherapy Combined with Hyperthermia Improves the Prognosis for Non-small-cell Lung Cancer
• Energy Analysis of Kikuchi Patterns
• Electron Spin Resonance Observation of Bias-Temperature Stress-Induced Interface Defects at NO/N2O-Annealed Chemical-Vapor-Deposition SiO2/(100) p-Si Substrates
• Paramagnetic Defect Spin Centers in Porous SiOCH Film Investigated Using Electron Spin Resonance
• Analysis of Carrier Traps in Silicon Nitride Film with Discharge Current Transient Spectroscopy, Photoluminescence, and Electron Spin Resonance

スポンサーリンク