Analysis of Carrier Traps in Silicon Nitride Film with Discharge Current Transient Spectroscopy, Photoluminescence, and Electron Spin Resonance

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概要

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• Electrical characteristics and an origin of traps in silicon nitride film were investigated using discharge current transient spectroscopy (DCTS), electron spin resonance (ESR), and photoluminescence (PL). It was found from DCTS that the density of traps of 1.1 eV from the conduction band edge increased with the increase of the gas-mixture ratio of SiH2Cl2 over NH3 for the fabrication of silicon nitride film. The energy levels of traps in silicon nitride film of 0.25, 0.68, 0.83–0.91, and 1.25–1.3 eV from the conduction band edge were found from photoluminescence observation. The ESR signals of the K-center that indicated a silicon dangling-bond increased with the increase of the gas-mixture ratio of SiH2Cl2 over NH3. It is suggested that the origin of traps of 1.1 eV from the conduction band in silicon nitride film is the silicon dangling-bond.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-09-15

著者

• Kamigaki Yoshiaki

  Department of Advanced Materials Science, Faculty of Engineering, Kagawa University, Takamatsu 761-0396, Japan

• Aozasa Hiroshi

  Department of Advanced Materials Science, Faculty of Engineering, Kagawa University, Takamatsu 761-0396, Japan

• Fujiwara Ichiro

  Advanced Device R&D Department, Semiconductor Technology Development Group, Semiconductor Business Unit, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan

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• Paramagnetic Defect Spin Centers in Porous SiOCH Film Investigated Using Electron Spin Resonance
• Analysis of Carrier Traps in Silicon Nitride Film with Discharge Current Transient Spectroscopy, Photoluminescence, and Electron Spin Resonance

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