Electron Spin Resonance Observation of Bias-Temperature Stress-Induced Interface Defects at NO/N2O-Annealed Chemical-Vapor-Deposition SiO2/(100) p-Si Substrates

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Using an electron spin resonance (ESR) technique, we observed bias-temperature (BT) stress-induced interface defects at chemical-vapor-deposition (CVD) SiO2/(100) p-Si substrates annealed in either NO or N2O gas. The g-factors and peak widths detected by ESR measurements are 2.0058 and 0.35 mT, and 2.0035 and 0.40 mT for interface defects, P\text{b0 and P\text{b1 centers, respectively. Before BT stress application, the total density of ESR-active defects at the interface was determined to be 1.51\times 10^{12} cm-2 for the NO-annealed sample, which is supposed to include a large number of hydrogen (H) atoms near the interface, and 1.85\times 10^{12} cm-2 for the N2O-annealed sample, which is supposed to include a small amount of H atoms. After BT stress application, the total interface defect density increases with positive BT stress time monotonically, which is mainly caused by H desorption reaction. In contrast, in the case of negative BT stress application, the total density decreases first, and then increases, which might be caused by two reactions; the first reaction is [\text{{\Cdot}Si{\tbond}Si_{3}}\rightarrow\text{Si{\tbond}Si_{3}}], and the second reaction is [\text{H:Si{\tbond}Si_{3}}\rightarrow\text{H{\Cdot}Si{\tbond}Si_{3}}\rightarrow\text{{\Cdot}Si{\tbond}Si_{3}}].
2011-11-25