Koshiba Shyun | Department of Advanced Materials Science, Faculty of Engineering, Kagawa University, 2217-20 Hayashi-cho, Takamatsu 761-0396, Japan
スポンサーリンク
概要
- Koshiba Shyunの詳細を見る
- 同名の論文著者
- Department of Advanced Materials Science, Faculty of Engineering, Kagawa University, 2217-20 Hayashi-cho, Takamatsu 761-0396, Japanの論文著者
関連著者
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MIYAGAWA Hayato
Department of Advanced Materials Science, Faculty of Engineering, Kagawa University
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Koshiba Shyun
Department of Advanced Materials Science, Faculty of Engineering, Kagawa University, 2217-20 Hayashi-cho, Takamatsu 761-0396, Japan
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Fujii Kensuke
Department Of Physics Graduate School Of Science Kyoto University
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MIZUMAKI Masaichiro
Japan Synchrotron Radiation Research Institute
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SAKATA Osami
Japan Synchrotron Radiation Research Institute
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Ueji Rintaro
Department Of Advanced Materials Science Faculty Of Engineering Kagawa University
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TAKAO Katsuhiro
Department of Advanced Materials Science, Faculty of Engineering, Kagawa University
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SUMIDA Naoto
Department of Advanced Materials Science, Faculty of Engineering, Kagawa University
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Liu Ziyuan
Device Analysis Technology Labs. Nec Corporation
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Kimura Shigeru
Japan Symchrotron Radiation Research Institute
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Kamigaki Yoshiaki
Department of Advanced Materials Science, Faculty of Engineering, Kagawa University, Takamatsu 761-0396, Japan
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Mitoh Hiroyuki
Department of Advanced Materials Science, Faculty of Engineering, Kagawa University, Takamatsu 761-0396, Japan
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Ando Shinichiro
Department of Advanced Materials Science, Faculty of Engineering, Kagawa University, Takamatsu 761-0396, Japan
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Koshiba Shyun
Department of Advanced Materials Science, Faculty of Engineering, Kagawa University, Takamatsu 761-0396, Japan
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Ishigaki Hirokazu
Devices and Analysis Technology Division, Renesas Electronics Corporation, Kawasaki 211-8668, Japan
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Aozasa Hiroshi
Department of Advanced Materials Science, Faculty of Engineering, Kagawa University, Takamatsu 761-0396, Japan
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Miyagawa Hayato
Department of Advanced Materials Science, Faculty of Engineering, Kagawa University, 2217-20 Hayashi-cho, Takamatsu 761-0396, Japan
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Miyagawa Hayato
Department of Advanced Materials Science, Faculty of Engineering, Kagawa University, Takamatsu 761-0396, Japan
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Kimura Shigeru
Japan Synchrotron Radiation Research Institute, 1-1-1 Kouto, Mikazuki-cho, Sayo-gun, Hyogo 679-5198, Japan
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Sakata Osami
Japan Synchrotron Radiation Research Institute, 1-1-1 Kouto, Mikazuki-cho, Sayo-gun, Hyogo 679-5198, Japan
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Ueji Rintaro
Department of Advanced Materials Science, Faculty of Engineering, Kagawa University, 2217-20 Hayashi-cho, Takamatsu 761-0396, Japan
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Liu Ziyuan
Devices and Analysis Technology Division, Renesas Electronics Corporation, Kawasaki 211-8668, Japan
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Takao Katsuhiro
Department of Advanced Materials Science, Faculty of Engineering, Kagawa University, 2217-20 Hayashi-cho, Takamatsu 761-0396, Japan
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Fujii Kensuke
Department of Advanced Materials Science, Faculty of Engineering, Kagawa University, 2217-20 Hayashi-cho, Takamatsu 761-0396, Japan
著作論文
- Electron Spin Resonance Observation of Bias-Temperature Stress-Induced Interface Defects at NO/N2O-Annealed Chemical-Vapor-Deposition SiO2/(100) p-Si Substrates
- Structural Analyses of Fractional Monolayer $(\text{GaAs})_{m}/(\text{AlAs})_{n}$ Superlattices by X-ray Resonant/Off-Resonant Scattering