Formation Mechanism of Metal-Oxides on Plasma-Exposed WSi_x/poly Si Gate Stacks

概要

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The formation mechanism of WO_x (x=2, 3), which breaks down the insulating SiO_2 layer covering of WSi_x/poly Si gate electrodes, has been investigated. Plasma exposure was found to introduce oxygen into the surface of WSi_x films and caused the WO_x formation during the subsequent thermal oxidation. It was revealed that the oxidation product on plasma-exposed WSi_x films depends on the grain orientation and no WO_x was formed on c-axis oriented grains. This observation was substantiated by growing WSi_x films with preferred c-orientation and no evidence of WO_x was found.
社団法人応用物理学会の論文
1999-02-15