Paramagnetic Defect Spin Centers in Porous SiOCH Film Investigated Using Electron Spin Resonance
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概要
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On the basis of electron spin resonance (ESR) measurements, we observed a unique paramagnetic center ($T_{b}$ center, $g=2.003$) in porous low-dielectric-constant (low-$k$) carbon-doped silicon oxide (SiOCH) film after annealing the film in vacuum. Fourier transform infrared spectroscopy (FT-IR) spectra indicated that the number of Si–CH3 bonds in the SiOCH film decreased with increased $T_{b}$-center absorbance. Molecular calculations indicate that this paramagnetic center differs from an $E'$ center and has a microstructure with carbon atoms in its backbond. A $T_{b}$ center was also observed after annealing using ultraviolet (UV) light or an electron beam (EB), which both increase film leakage current.
- 2007-06-15
著者
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Ohno Takahisa
Computational Materials Science Center National Institute For Materials Science
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Nakao Shinichi
Research Dept. 2 Semiconductor Leading Edge Technologies Inc. (selete)
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YONEDA Katsumi
Research Dept. 1, Semiconductor Leading Edge Technologies, Inc. (Selete)
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Kamigaki Yoshiaki
Department of Advanced Materials Science, Faculty of Engineering, Kagawa University, Takamatsu 761-0396, Japan
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Ushio Jiro
Computational Materials Science Center, National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan
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Kato Manabu
Research Department 1, Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan
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Hamada Tomoyuki
Collaborative Research Center for Frontier Simulation Software for Industrial Science, Institute of Industrial Science, University of Tokyo, Tokyo 153-8505, Japan
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Hamada Tomoyuki
Collaborative Research Center for Frontier Simulation Software for Industrial Science, Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8503, Japan
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Kobayashi Nobuyoshi
Research Department 1, Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan
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Kondo Seiichi
Research Department 1, Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan
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Yoneda Katsumi
Research Department 1, Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan
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