Physical Guiding Principles for High Quality Resistive Random Access Memory Stack with Al
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概要
- 論文の詳細を見る
We theoretically clarified the atomistic role of the Al<inf>2</inf>O<inf>3</inf>oxygen vacancy (V<inf>\text{O</inf>) barrier layer in advanced ReRAM stacks. We found that V<inf>\text{O</inf>filament formation in Al<inf>2</inf>O<inf>3</inf>can be controlled by applying voltage when the Al<inf>2</inf>O<inf>3</inf>layer is in contact with V<inf>\text{O</inf>source layer such as Hf, although V<inf>\text{O</inf>formation in Al<inf>2</inf>O<inf>3</inf>is difficult in usual situation. Moreover, we proposed a physical guiding principle toward designing high quality ReRAM stacks with Al<inf>2</inf>O<inf>3</inf>V<inf>\text{O</inf>barrier layers.
- 2013-04-25
著者
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Ohno Takahisa
Computational Materials Science Center National Institute For Materials Science
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Nishi Yoshio
Department Of Applied Physics Faculty Of Engineering Osaka City University
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Shiraishi Kenji
Graduate School Of Applied Physics Univ Of Tsukuba
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Kamiya Katsumasa
Graduate School Of Pure And Applied Sciences University Of Tsukuba
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Momida Hiroyoshi
Computational Materials Science Center, National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan
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Niwa Masaaki
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan
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Yang Moon
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan
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Magyari-Köpe Blanka
Department of Electrical Engineering, Stanford University, Stanford, CA 94305, U.S.A.
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Ohno Takahisa
Computational Materials Science Unit, National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan
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Nishi Yoshio
Department of Electrical Engineering, Stanford University, Stanford, CA 94305, U.S.A.
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