Evaluating Strained/Relaxed-Ge, Strained-Si, Strained-SiGe For Future Nanoscale p-MOSFETs
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概要
- 論文の詳細を見る
- 2006-09-13
著者
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Nishi Yoshio
Department Of Applied Physics Faculty Of Engineering Osaka City University
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SARASWAT Krishna
Department of Electrical Engineering, Stanford University
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Jungemann Christoph
University Of The Armed Forces
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Kim Donghyun
Department Of Electrical Engineering Stanford University
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Kim Donghyun
Department Of Electrical Engineering And Computer Science Korea Advanced Institute Of Science And Te
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Krishnamohan Tejas
Department Of Electrical Engineering Stanford University
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Saraswat Krishna
Department Of Electrical Engineering Stanford University
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KIM Donghyun
Department of Chemistry, Hanyang University
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