Low Thermal Budget Polycrystalline Silicon-Germanium Thin-Film Transistors Fabricated by Rapid Thermal Annealing

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概要

• 論文の詳細を見る

• A low temperature (〓600℃) and short time polycrystalline silicon-germanium thin-film transistor technology is demonstrated. The use of rapid thermal annealing for channel crystallization and dopant activation allows for shorter anneal times and thus higher throughputs than with conventional furnace annealing. Moreover, the use of silicon-germanium allows for lower process temperatures to be used than is required for silicon thus leading to minimal shrinkage and warpage, and enabling this technology to be compatible with large-area glass substrates.

• 社団法人応用物理学会の論文
• 1994-08-15

著者

• King Tsu-jae

  Xerox Palo Alto Research Center

• SARASWAT Krishna

  Department of Electrical Engineering, Stanford University

• JURICHICH Steve

  Department of Electrical Engineering, Stanford University

• MEHLHAFF John

  Aktis Corporation

• Jurichich Steve

  Department Of Electrical Engineering Stanford University

• Saraswat Krishna

  Department Of Electrical Engineering Stanford University

関連論文

• Ge and SiGe for High Performance MOSFETs and Integrated Optical Interconnects
• Low Thermal Budget Polycrystalline Silicon-Germanium Thin-Film Transistors Fabricated by Rapid Thermal Annealing
• Evaluating Strained/Relaxed-Ge, Strained-Si, Strained-SiGe For Future Nanoscale p-MOSFETs

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